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《CHINESE JOURNAL OF SEMICONDUCTORS》 1999-09
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Luminescent Spectrum of ZnO Films Deposited on Si Substrates

Fu Zhuxi, Lin Bixia, Guo Changxin, Liao Guihong(Department of Physics, University of Science and Technology of China, Hefei\ 230026)  
The cathodoluminescence of ZnO films deposited on Si substrates by reactive DC sputtering has been investigated.Comparing X\|ray diffraction patterns with cathodoluminescent spectra reveals the dependence of the luminescent spectrum on crystallinity of the ZnO films.For the ZnO films with high crystal quality,not only the characteristic green band(520nm)of ZnO but also the stronger ultraviolet(390nm)and the weak blue(430~460nm)bands have been observed.It is also found that the intensity of the ultraviolet band increases sharply with increasing the current density of cathode\|ray electron beam.The intensity of the green band becomes saturated at the same time.These results indicate that the ultraviolet band,which peak energy is 3 16eV,must be related to band\|gap transition of ZnO films.The exciton binding energy in ZnO is 60meV.So that the ultraviolet band,which energy is lower than the band gap of ZnO about 40meV,may correspond to the exciton emission.Thus the intensity of the ultraviolet band is able to much increase as long as the crystal quality of ZnO films is improved.Further experiments are needed to show the details of the energy levels of ZnO films.
【CateGory Index】: TN304.055
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