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Characterization of ZnO Thin Film Treated With High Temperature for Buffer Layer of GaN on Silicon Substrate

Li Jianguang, Ye Zhizhen, Wang Lei, Zhao Binghui, Yuan Jun, Que Duanlin(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Received 3 May 1998, revised manuscript received 12 June 1998  
The high C \|oriented ZnO thin film was prepared by DC reaction magnetron sputtering. Simulated the situation of growing the GaN thin film, the samples were traeted with high temperature in order to verify the possibility of using them as the buffer layer. After annealing, the results showed that a rich zone of Zinc was formed in the interface between the ZnO and the silicon substrate. The absorbed oxygen in the thin films decreased and the porosity of the thin films was reduced, then the properties of the ZnO thin films were improved. Therefore, the ZnO thin film prepared by DC reaction magnetron sputtering is suitable to the buffer layer for growing GaN single\|crystal thin film.
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