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《CHINESE JOURNAL OF SEMICONDUCTORS》 1999-11
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Infrared Extinction in CdTe Single Crystal

Yang Bailiang\+1, Yukic Ishikawa\+2, Minoru Isshiki\+2(1\ Changchun Institute of Physics, The Chinese Academy of Sciences, Changchun\ 130021) (2\ Institute for Advanced Materials Processing, Tohoku University, Japan)Received 2 July 1998, revised manuscr  
The infrared extinction due to the scattering by Te precipitates is simulated, and the Cd\|annealing pressure dependence of the infrared extinction in CdTe is investigated with infrared transmittance, photoluminescence and Hall measurements.The results suggest that the IR extinction is dominated by the absorption at lower energy and by precipitates scattering at higher energy,respectively,and both could be improved by Cd\|annealing.
【CateGory Index】: TN213
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【References】
Chinese Journal Full-text Database 4 Hits
1 WEI Yan-feng 1,FANG Wei-zheng 1,LIU Cong-feng 1,YANG Jian-rong 1,HE Li 1, WANG Fu-jian 2,WANG Xing-jun 2 and HUANG Da-ming 2(1 Shanghai Institute of Technical Physics,The Chinese Academy of Sciences,Shan ghai 200083,China) (2 Surface Physics Laborator;Study on the Annealing of Cd_(1-x) Zn_x Te Alloys[J];Chinese Journal of Semiconductors;2001-08
2 GAO De-you,ZHAO Bei-jun,ZHU Shi-fu,TANG Shi-hong,HE Zhi-yu,ZhANG Dong-min,FANG Jun,CHENG Xi(Department of Materials Science,Sichuan University,Chengdu 610064,China);Annealing of Cd_(1-x)Zn_xTe Wafers[J];Journal of Functional Materials and Devices;2008-03
3 XU Ya-dong,JIE Wan-qi,WANG Tao,LIU Wei-hua(School of Material Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China);Growth of Large-size CdZnTe Single Crystal Using Seeded Vertical Bridgman Method[J];Journal of Synthetic Crystals;2006-06
4 HE Zhi-yu,ZHAO Bei-jun,ZHU Shi-fu,YE Lin-sheng,ZHONG Yu-hang,WANG Limiao,YANG Hui-guang,ZENG Ti-xian(Department of Material Science,Sichuan University,Chengdu 610064,China);Study on IR Transmittance of CdSe Wafer[J];Journal of Synthetic Crystals;2007-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 LI Guo qiang, HUA Hui, JIE Wan qi (State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, CHN);Investigation on IR Transmission of CdZnTe Wafers[J];Semiconductor Optoelectronics;2003-04
2 Zhu Jiqian; Chu Junhao; Zhang Xiaoping; Li Biao and Cheng Jijian (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,The Chinese Academy of Sciences, Shangha 200083)(Departmeat of Inorganic Materials, East China Uniersity o;Study on Crystalline Quality of Cd-Annealing CdZnTe Wafers Grown by Bridgman Method[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-10
3 Li Yujie, Liu Xiaohua, Jie Wanqi(The State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an\ 710072);Defect Etching of Infrared Semiconductor HgMnTe[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-09
4 Gu Huiming, Yang Jianrong, Chen Xinqiang, He Li(Epitaxy Research Center for Advanced Material and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai\ 200083)Received 28 July 1998,;Distribution Behavior of Dislocation in CdZnTe Materials[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-12
5 LI Dao-qiang,SANG Wen-bin,QIAN Yong-biao,SHI Wei-min,LI Dong-mei, LI Wan-wan,MIN Jia-hua and LIU Dong-hua(Department of Electronic Information Materials,Shanghai University,Shanghai 201800,China);Crystalline Quality of Cd/Zn Annealing High Resistivity CdZnTe Wafers[J];Chinese Journal of Semiconductors;2001-05
6 WEI Yan-feng 1,FANG Wei-zheng 1,LIU Cong-feng 1,YANG Jian-rong 1,HE Li 1, WANG Fu-jian 2,WANG Xing-jun 2 and HUANG Da-ming 2(1 Shanghai Institute of Technical Physics,The Chinese Academy of Sciences,Shan ghai 200083,China) (2 Surface Physics Laborator;Study on the Annealing of Cd_(1-x) Zn_x Te Alloys[J];Chinese Journal of Semiconductors;2001-08
7 JIN Ying-rong,ZHU Shi-fu,ZHAO Bei-jun,SHAO Shuang-yun,LI Qi-feng, WANG Xue-min,YU Feng-liang and SONG Fang(Department of Materials Science,Sichuan University,Chengdu 610064,China);Vapor Growth and Electrical Properties of CdSe Crystals with Excess Cd[J];Chinese Journal of Semiconductors;2001-09
8 Zhu Jiqian 1,2,3 , Chu Junhao 1, Zhang Xiaoping 1, Li Biao 1 and Cheng Jijian 3(1 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 200083) (2 College of Material Scie;Study of Te Precipitated Phase in CdZnTe Crystals[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-04
9 JIE Wanqi(Stale Key Laboratory of Solidification Processing,Northwestern Polytechnical University)(Correspondent:JIE Wanqi,State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072);CHARACTERISTICS OF SOLUTE REDISTRIBUTION DURING CRYSTAL GROWTH OF CdTe AND THE SELECTION OF GROWTH PARAMETERS[J];CHINESE JOURNAL OF MATERIAL RESEARCH;1996-03
10 Xie Quan \ Liu Rangsu\ Xu Zhongyu \ Peng Ping (Physics Department of Hunan University, Changsha 410082) ( * Chemistry Department of Hunan University, Changsha 410082) Zhang Youyu (Testing Centre of Hunan Normal University, Changsha 410081);Analysis on The Microstructure of Graphite Carbon Black and Silica in Rubber[J];JOURNAL OF CHINESE ELECTRON MICROSCOPY SOCIETY;1998-02
【Secondary References】
Chinese Journal Full-text Database 8 Hits
1 Wang Reng1,Fang Weizheng1,Zhao Pei1,Zhang Lei1,Ge Jin1,Yuan Shixin1,Zhang Huier1,Hu Shuhong1,Dai Ning1,Chen Xiaoshu2,Wu Xiaojun2,He Shan2,and Wang Gang2(1 National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)(2 State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China);Growth and Characteristics of ZnTe Single Crystal for THz Technology[J];Journal of Semiconductors;2008-05
2 GAO De-you,ZHAO Bei-jun,ZHU Shi-fu,TANG Shi-hong,HE Zhi-yu,ZhANG Dong-min,FANG Jun,CHENG Xi(Department of Materials Science,Sichuan University,Chengdu 610064,China);Annealing of Cd_(1-x)Zn_xTe Wafers[J];Journal of Functional Materials and Devices;2008-03
3 LIU Qi-jun,LIU Zheng-tang,FENG Li-ping (College of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an,Shaanxi 710072,China);Study on electronic structure and optical properties of zinc blende CdSe[J];Journal of Yanshan University;2010-01
4 ZHOU Hao,JIE Wan-qi,ZHA Gang-qiang,GAO Jun-ning(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072,China);Structure and surface morphology of nano-crystalline CdZnTe films by vacuum deposition method[J];Journal of Functional Materials;2010-02
5 ZHAO Xin(Graduate Department,Civil Aviation Flight University of China,Guanghan 618307);Research Development of PbI_2 Single Crystal Growth and Room-temperature Nuclear Radiation Detectors[J];Materials Review;2011-01
6 HUANG Hui,PAN Shun-chen(Kunming Institute of Physics, Kunming, Yunnan 650223, China);Study on the Annealing Cadmium Zinc Telluride Substrate Wafers by Micro-Raman Spectrum[J];Infrared Technology;2004-05
7 PENG Lan,ZHANG Quan-zhuang(College of Power Engineering,Chongqing University,Chongqing 400044,China);Global Simulation Crystal Growth of CdZnTe by the Detached Vertical Bridgman Method[J];Journal of Synthetic Crystals;2009-06
8 CHEN Jun,MIN Jia-hua,LIANG Xiao-yan,ZHANG Ji-jun,WANG Dong,LI Hui(School of Material Science and Engineering,Shanghai University,Shanghai 200072,China);Investigation on the Vacuum Carbon Coating Process on Quartz Ampoules for CdZnTe Crystal Growth[J];Journal of Synthetic Crystals;2010-05
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