Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《CHINESE JOURNAL OF SEMICONDUCTORS》 2000-01
Add to Favorite Get Latest Update

Highly Bright Yellow\|Emitting Organic Diode *

HUANG Jin\|song, XIE Zhi\|yuan, YANG Kai\|xia, LI Chuan\|nan, HOU Jing\|ying and LIU Shi\|yong(National Integrated Optoelectronics Laboratory, Jilin University, Changchun\ 130023, China) NAN Jin and DAI Guo\|rui(Department of Electronic Engineerin  
We have reported a yellow\|emitting organic diode with high brightness.The maximum luminance of the device can reach to 40000cd/m\+2 at 19V with external quantum efficiency 3\^4%.
【Fund】: 国家自然科学基金!(No.69637010);;国家“863”高技术计划!(No.863-307-12-04(02))
【CateGory Index】: TN312.8
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 7 Hits
1 ZHAO Guang-qiang1,LI Yu-zhen2,LI Hong-jian3(1.Depart of Maths and Physics,Hunan Institute Engineering,Xiangtan 411104,China;2.Depart of Information and Computation,Zhuzhou Institute Industry,Zhuzhou 412008,China;3.Depart of Applied Physics,Hunan University,Changsha 410082,China);Stability of organic/polymer light-emitting devices[J];Micronanoelectronic Technology;2004-02
2 ZHAO Jun qing 1,XIE Shi jie 1,2 ,HAN Sheng hao 3, YANG Zhi wei 3,YE Li na 3 and YANG Tian lin 3[KH2D][WT6BX](1 Department of Physics,Shandong University,Jinan 250100,China)(2 National Laboratory of Crystal Materials,Shandong University;Vacuum-Deposited Bilayer Organic Light-Emitting Diodes[J];Chinese Journal of Semiconductors;2001-02
3 YAN Jin-liang,ZHAO Yin-nü and ZHU Chang-chun[KH3/8D][WT6BX](School of Electronics and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China);Luminescence Properties of Blue-Emission Polymer Blends[J];Chinese Journal of Semiconductors;2001-04
4 WANG Shu-rui,LIU Zhong-li,XU Ping,GE Yong-cai,YAO Wen-qing and GAO Cui- hua (Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,Chi na);6H-SiC High-Voltage Schottky Ba rrier Diodes[J];Chinese Journal of Semiconductors;2001-08
5 Jiang Yewen 1,Tan Haishu 1,2 ,Yao Jianquan 2 and Chen Lichun 2(1 Department of Electronics,Foshan University,Foshan 528000,China) (2 College of Precision Instrument and Opto Electronics Engineering,Tianjin University,Tianjin 300072,China);Color Tunable Electroluminescence from Polymer Film/Inorganic Film Heterojunction[J];Chinese Journal of Semiconductors;2003-02
6 Peng Yingquan1,Zhang Lei1 and Zhang Xu2(1 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China) (2 Department of Physics,Gansu United University,Lanzhou 730030,China);Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes[J];Chinese Journal of Semiconductors;2003-05
7 Ou Guping1,Song Zhen2,Gui Wenming1,and Zhang Fujia 1, (1 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China)(2 Beijing Mechanical Industry Institute,Beijing 100085,China);Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J];Chinese Journal of Semiconductors;2006-02
【Citations】
Chinese Journal Full-text Database 1 Hits
1 Ma Yuguang;Tang Jianguo;Liu Shiyong;Liu Mingda;Zhang Ruifeng and Shen Jiacong(National Laboratory of Integrated optic Electronics Jinn University,Changchun 130023)(αKey Laboratory for Molecular Spectra and Structure of Jinn Univesity)HT6 Received 1 Novem;Characteristics of Schottky Junctions Formed in Polymer Electroluminescent Device[J];Chinese Journal of Semiconductors;1995-07
【Co-citations】
Chinese Journal Full-text Database 1 Hits
1 Xu Xiaochun;Wang Yan;Chen Yongdong;Qian Wei;Li Sheng;Chen Qingcong;Huang Jinggen;Tao Fenggang;Lao Pudong(Fudan University)Chu Junhao(National Key Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Academia sinica);Forming-Process of Effective Charge Carriers in Electroluminescence from Tris-(8-Quinolinolate)-Alunium in Double-Layered Structure[J];JOURNAL OF FUDAN UNIVERSITY;1998-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 XIE Zhi\|yuan, LI Chuan\|nan, HUANG Jin\|song, XIAO Bu\|wen, FENG Jing, LIU Shi\|yong, LI Yan\|qin\+a, WANG Yue\+a, SHEN Jia\|cong\+a and HOU Ming\|bo\+b(National Laboratory of Integrated Optoelectronics, Jilin University, Changchun\ 130023, China) (a;Organic Multi-Layer White LEDs[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-02
2 LIU En\|feng\+1, XIONG Shao\|zhen\+1, ZHAO Ying\+1, XIE Wei\|liang\+1, WU Chun\|ya\+1, ZHOU Zhen\|hua\+1, HU Jing\|kang\+1, ZHANG Wen\|wei\+2,SHEN Jin\|yuan\+2, CHEN Jian\|sheng 3 , ZHANG Yuan\|yue 3 and ZHANG Li\|zhu 4(1\ Institute of Photoe;Recoverable Unstable Phenomena in PLED\+*[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-06
3 ZHAO Jun qing 1,XIE Shi jie 1,2 ,HAN Sheng hao 3, YANG Zhi wei 3,YE Li na 3 and YANG Tian lin 3[KH2D][WT6BX](1 Department of Physics,Shandong University,Jinan 250100,China)(2 National Laboratory of Crystal Materials,Shandong University;Vacuum-Deposited Bilayer Organic Light-Emitting Diodes[J];Chinese Journal of Semiconductors;2001-02
4 YAN Jin liang and ZHU Chang chun(School of Electronics and Information Engineering,Xi'an Jiaotong University,Xi'an 710049,China);Deterioration of Blue Emission Electroluminescent Devices Made of Single Layer Polymer Thin Films[J];Chinese Journal of Semiconductors;2001-02
5 XIONG Shao-zhen,ZHAO Ying,WU Chun-ya,HAO Yun,WANG Yue,CHEN You-su, YANG Hui-dong and ZHOU Zhen-hua(Institute of Photo-Electronics,Nankai University,Key Laboratory of Opto-Electronic Information Technical Science, The Ministry of Education of China,Tianj;Simulation Analysis of the Transport Performance of PLED[J];Chinese Journal of Semiconductors;2001-09
6 Wang Dongxing 1,Zhu Min 1,Kudo Kazuhiro 2 and Tanaka Kuniaki 2(1 Department of Electrical Engineering,Dalian Railway Institute,Dalian 116028,China) (2 Japan Chiba University,Chiba,Japan);Fabrication of Organic Semiconductor Thin Film Transistor[J];Chinese Journal of Semiconductors;2002-06
7 Wang Huiyao 1, Wang Yinyue 2, Song Qing 3, Wang Tianming 1(1 Department of Materials Science, Lanzhou University, Lanzhou 730000) (2 Department of Physics, Lanzhou University, Lanzhou 730000) (3 Lanzhou Railway Institute, Lanzhou 730070);Effect of Argon Ion Bombardment on Formation of 6H SiC Prepared by Annealing of RF Sputtering a SiC∶H Film[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-08
8 Xie Shijie, Liu Desheng, Wei Jianhua, Zhao Junqing(Department of Physics, Shandong University, Jinan 250100);Improved Polymer Light emitting Devices With Polyaniline and Doped Polyaniline as Electrodes[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-01
9 ZHANG Fujia; SHAO Jiafeng; ZHANG Dejiang(Department of Physics, Lanzhou University, Lanzhou 730000, China)QI Li; Gan Runjin(Beijing Mechanical Industry Institute, Beijing 100083. China);PREPARATION OF ORGANIC SEMICONDUCTOR PTCDA ANDSTUDIES ON ITS STRUCTURE INDICATION AND SPECIFICPROPERTY OF LIGHT ABSORPTION[J];CHINESE JOURNAL OF LUMINESCENCE;1999-04
10 XU Zheng 1, LIAO Liang sheng 1, LEE Zhen shen 2, LEE Shuit tong 2, INBASEKARAN M 3, WOO E P 3, WU W W 3 (1 Surface Physics Laboratory,Fudan University,Shanghai 200433,China; 2 Center of Super Diamond and Advanced Films,Ci;Comparison Studies on the Stability of Small Molecule Light Emitting Materials and Polymer Light Emitting Materials[J];CHINESE JOURNAL OF LUMINESCENCE;2000-03
【Secondary References】
Chinese Journal Full-text Database 10 Hits
1 ZHAO Guang-qiang1,LI Yu-zhen2,LI Hong-jian3(1.Depart of Maths and Physics,Hunan Institute Engineering,Xiangtan 411104,China;2.Depart of Information and Computation,Zhuzhou Institute Industry,Zhuzhou 412008,China;3.Depart of Applied Physics,Hunan University,Changsha 410082,China);Stability of organic/polymer light-emitting devices[J];Micronanoelectronic Technology;2004-02
2 ZHANG Yu ming 1,ZHANG Yi men 1,P Alexandrov 2 and J H Zhao 2(1 Institute of Microelectronics,Xidian University,Xi'an 710071,China) (2 Department of Electrical and Computer Engineering,The State University of New Jersey,NJ 08854 8058,USA);Fabrication of 4H-SiC Merged PN-Schottky Diodes[J];Chinese Journal of Semiconductors;2001-03
3 Peng Yingquan,Zhang Fujia,Li Hairong and Song Chang'an(School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China);Numerical Study of Distribution of Electric Field and Carrier Concentration in Luminescent Layer of Organic Light-Emitting Devices[J];Chinese Journal of Semiconductors;2003-03
4 Peng Yingquan1,Zhang Lei1 and Zhang Xu2(1 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China) (2 Department of Physics,Gansu United University,Lanzhou 730030,China);Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes[J];Chinese Journal of Semiconductors;2003-05
5 Zhang Haiyan,Ye Zhizhen,Huang Jingyun,Li Bei,Xie Jinghong and Zhao Binghui(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China);Fabrication of Schottky Barrier Diodes of High Frequency Based on Thin Silicon Epilayer[J];Chinese Journal of Semiconductors;2003-06
6 Zheng Daishun 1,Zhang Xu 2,and Qian Keyuan 1(1 Graduate School at Shenzhen,Tsinghua University,Shenzhen 518055,China)(2 School of Mathematics and Informations,Gansu United University,Lanzhou 730000,China);Influence of Hole Buffer Layer CuPc on Properties of Organic Light-Emitting Devices[J];Chinese Journal of Semiconductors;2005-01
7 Zhou Jinbo,Sun Changzheng,Xiong Bing,Wang Jian,and Luo Yi(State Key Laboratory on Integrated Optoelectronics,Tsinghua University,Beijing 100084,China);Polymer Gratings with Low Surface Relief Based on UV Photo-Polymerization[J];Chinese Journal of Semiconductors;2005-02
8 Nie Hai,Zhang Bo,Tang Xianzhong,and Li Yuanxun(School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China);Electroluminescence of Polymer/Small-Molecules Heterostructure Doped Light-Emitting Diodes and Their Emission Mechanism[J];Chinese Journal of Semiconductors;2005-09
9 Shi Junpeng~1,Wen Zhenchao~1,Song Chang’an~1,Chen Yin~2,and Peng Yingquan~1,(1 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China)(2 School of Information Science & Engineering,Lanzhou University,Lanzhou 730000,China);Fabrication of a Bis (8-hydroxyquinoline) Zinc Amorphous-Film Device and Switching Effect[J];Chinese Journal of Semiconductors;2005-10
10 Yang Qingsen,Peng Yingquan,Xing Hongwei,Li Xunshuan,Yuan Jianting,Ma Chaozhu,and Zhao Ming(School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China);Temperature Characteristics of Bilayer Thin-Film Devices Under Organic Interface Limited Current Conduction[J];Journal of Semiconductors;2008-06
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved