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《CHINESE JOURNAL OF SEMICONDUCTORS》 2000-02
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Electroluminescence From Silicon Based Porous β-SiC Film and Its Mechanism

WU Xiao-hua, BAO Xi-mao, LI Ning\|sheng, LIAO Liang-sheng and ZHENG Xiang-qin(Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing\ 210093, China)Received 11 December 1998, revised manuscript receive  
High dose of C\++ ions are implanted into crystal silicon wafers at an energy of 50keV. A continuous β \|SiC layer is formed after thermal annealing. Conventional anodization technique is used to turn this layer into a porous \%β\%\|SiC layer. A semitransparent gold film is selectively evaporated on the surface of the sample to form the top contact. Electroluminescence (EL) measurement is performed on the samples. When the applied voltage is higher than 25 V, blue (~447 nm) EL can be obtained. The EL mechanism is discussed.
【Fund】: 国家自然科学基金
【CateGory Index】: TN304.055
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