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《CHINESE JOURNAL OF SEMICONDUCTORS》 2000-04
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Structure and Conductive Mechanism of ITO and ZAO Films

CHEN Meng, BAI Xue\|dong, HUANG Rong\|fang and WEN Li\|shi(Institute of Metal Research, The Chinese Academy of Sciences, Shenyang\ 110015, China)Received 10 December 1998, revised manuscript received 20 March 1999  
The lattice distortion of both ITO and ZAO films before and after being annealed has been discussed based on their own XRD data, respectively. The results indicate that the lattice expansion of as\|deposited low temperature ITO film is attributed to the replacement of Sn 2+ for In 3+ , and the free carriers are supplied by the oxygen vacancies. For those as\|grown high temperature or annealed ITO films, the free carriers are mainly provided by the substitution of Sn 4+ for In 3+ . The lattice distortion of as\|deposited low temperature ZAO film is supposed to be resulted from the residual stress. The free carriers are given by both the replacement of Al 3+ for Zn 2+ and oxygen vacancies, which is agreement with that of in high temperature as\|grown or annealed ZAO films.
【Fund】: 沈阳市科技攻关项目资助
【CateGory Index】: TN304.21
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