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《Chinese Journal of Semiconductors》 2001-08
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Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron Sputtering

YE Zhi-zhen,CHEN Han-hong,LIU Rong,ZHANG Hao-xiang and ZHAO Bin-hui(National Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 3100 27,China)  
C -axis uniquely oriented ZnO films co mposed of columnar crystallites of 100nm in size are prepared by DC reacti ve magnetron sputtering on (100)Si substrate.TEM image indicates that columnar crystallites are perfect single crystal insides,except for the larger stress alo ng the grain boundary.UV photoluminescence(3 3eV) is observed when ZnO films are excited by He-Cd laser at room temperature.Stress at boundary causes an int rinsic UV emission peak shift to the lower energy .Oxygen vacancy or zinc int erstitial causes deep-level emission.With higher substrate temperature,the crys tallinity is improved and the stress and deep-level green emission is reduced.
【Fund】: 国家重大基础研究资助项目 (编号 :G2 0 0 0 0 683 -0 6)
【CateGory Index】: TN304.21
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