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《Chinese Journal of Semiconductors》 2001-08
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Optically Pumped InGaAs/InGaAsP MQW Microdisk Lasers Grown by MOCVD

WU Gen-zhu 1,ZHANG Zi-ying 2,REN Da-cui 1 and ZHANG Xing-de 1(1 National Key Laboratory of High-Power Semiconductor Laser,Changchun Institut e of Optics and Fine Mechanics,Changchun 130022,China) (2 Institute of Semiconductors,The Chinese Academy of Sc  
The wafer of an InGaAs/InGaAsP multiple quantum wells (MQW) microdisk laser is grown by MOCVD,and a 9 5μm-diamete r InGaAs/InGaAsP MQW microdisk laser is made with modern mocrofabrication such as photolithography,dry etching,wet etching,etc.The fabrication process is desc ribed in detail.The InGaAs/InGaAsP MQW microdisk lasers are demonstrated,w hich are optically pumped with a 514 5nm Ar + laser beam a t li- quid nitrogen temperature.A threshold pump power of 150μW is obtained at pump wavelength of 514 5nm for a 9 5μm-diameter single disk,when the la sing emission wavelength is about 1 6μm,quality factor Q =800 and the emiss ion linewidth Δ λ =2nm.At the same time,it is pointed out that the linewidth of a microdisk laser is larger than that of the conventional semiconductor las ers is due to the former having a high Q -factor.
【Fund】: 兵器预研基金资助项目 (CHGJ-1998)
【CateGory Index】: TN248.4
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【Co-citations】
Chinese Journal Full-text Database 4 Hits
1 Zhao Hongdong 1) Chen Guoying 1) Zhang Cunshan 1) Zhang Yimo 2) Shen Guangdi 3) 1) College of Electricity Information,Hebei University of Technology,Tianjin 300130 2) College of Precision Instrument & Optoelectronics E;Quantum Well Vertical Cavity Surface Emitting Laser and Its Micro Cavity Physics[J];Laser & Optronics Progress;2001-04
2 XU Haijun, LI Xinjian (Department of Physics and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University,Zhengzhou 450052; );Research Progress of the Porous Silicon Microcavity[J];Science Technology and Engineer;2004-05
3 Pan Wei;Zhang XiaoXia;Luo Bin; Lu Hongchang;Chen Jianguo (Department of Computer and Communication Engineering, Southwest Jiaotong University Chengdu 610031);Rate Equation Analysis of the Multi-quantum Well VCSELs[J];CHINESE JOURNAL OF QUANTUM ELECTRONICS;1999-04
4 ZHAO Hong dong 1,2 , ZHANG Yi mo 1, ZHOU Ge 1 (1.School of Precision Instrument and Optoelectronics Engineering,Optoelectronics Information Science and Technology Lab,Tianjin University,Tianjin 300072,China;2.Hebei University of Technology,Tianj;DIFFERENCE BETWEEN TE AND TM MODES SPONTANEOUS EMISSION IN QUANTUM WELL MICRO-CAVITY LASERS[J];Journal of Tianjin University;2000-01
【Co-references】
Chinese Journal Full-text Database 3 Hits
1 Zhang Bei;Wang Ruopeng;Ding Xiaomin;Yang Zhijian;Dai Lun;Cui Xiaoming;Wang Shumin(Department of Physics,State Key Laboratory for Mesoscopic Physics,Peking University,Beijing 100871, China);THE STUDY ON InGaAsP SINGLE QUANTUM WELL SEMICONDUCTOR MICRODISK LASERS.[J];JOURNAL OF INFRARED AND MILLIMETER WAVES;1995-04
2 NING Yong Qiang WU Sheng Li WANG Li Jun LIN Jiu Ling LIU Yun FU De Hui LIU Yu Mei JIN Yi Xin (Laboratory of Excited State Processes, Changchun Institute of Physics. Chinese Academy of Sciences, Changchun, Jilin 130021, China);InGaAsP MQW MICRODISK LASER[J];JOURNAL OF INFRARED AND MILLIMETER WAVES;1998-05
3 GENG Sujie1,WANG Lin2 (1Changchun University of Science and Technology, Changchun 130022,China; 2.North China Reserch Institute of EO, Beijing 100015 China);The Semiconductor Laser and Its Applications in Military[J];Laser & Infrared;2003-04
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