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《Chinese Journal of Semiconductors》 2001-08
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Optically Pumped InGaAs/InGaAsP MQW Microdisk Lasers Grown by MOCVD

WU Gen-zhu 1,ZHANG Zi-ying 2,REN Da-cui 1 and ZHANG Xing-de 1(1 National Key Laboratory of High-Power Semiconductor Laser,Changchun Institut e of Optics and Fine Mechanics,Changchun 130022,China) (2 Institute of Semiconductors,The Chinese Academy of Sc  
The wafer of an InGaAs/InGaAsP multiple quantum wells (MQW) microdisk laser is grown by MOCVD,and a 9 5μm-diamete r InGaAs/InGaAsP MQW microdisk laser is made with modern mocrofabrication such as photolithography,dry etching,wet etching,etc.The fabrication process is desc ribed in detail.The InGaAs/InGaAsP MQW microdisk lasers are demonstrated,w hich are optically pumped with a 514 5nm Ar + laser beam a t li- quid nitrogen temperature.A threshold pump power of 150μW is obtained at pump wavelength of 514 5nm for a 9 5μm-diameter single disk,when the la sing emission wavelength is about 1 6μm,quality factor Q =800 and the emiss ion linewidth Δ λ =2nm.At the same time,it is pointed out that the linewidth of a microdisk laser is larger than that of the conventional semiconductor las ers is due to the former having a high Q -factor.
【Fund】: 兵器预研基金资助项目 (CHGJ-1998)
【CateGory Index】: TN248.4
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