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《Chinese Journal of Semiconductors》 2001-08
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Simulation of Thermal Performance of ULSI Inte rconnect System

RUAN Gang 1 and XIAO Xia 2 (1 ASIC and System State Key Laboratory,Fudan University,Shanghai 200433,China) (2 Center of Microtechnology,Technical University of Chemnitz,Chemnitz D-09107 ,Germany)  
The thermal performance for a multi-objective electrica l optimized five-layer metallization interconnect structure of 0 15μm generatio n ULSI circuits is simulated by using the finite element method based on softwar e ANSYS.The thermal distribution and temperature increase of this interconnect s ystem are obtained for Al and Cu metallization with different dielectric materia ls (SiO 2 or low k dielectric xerogel).The simulation results are compared with the results from Stanford University for another five-layer metallization interconnect.The influences of the employment of low k dielectric on the hea t dissipation of the metallization interconnect system are discussed.The feature s of ANSYS are briefly introduced,especially its advantages on thermal simulatio n.
【CateGory Index】: TN405.97
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