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《Chinese Journal of Semiconductors》 2001-11
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Theoretical Calculation of Optimum Doping Content in Oxide Semiconductor Transparent Conductive Films

FAN Zhi xin,SUN Yi cai and CHEN Jiu lin(Department of Applied Physics,Hebei University of Technology,Tianjin 300130,China)  
Taken aluminum doped zinc oxide films and tin doped indium oxide films as examples,the theory of optimum doping content is given.The quantitative calculation results are:optimum doping content of aluminum in AZO ceramic target is C ≈2 9894%(wt);optimum doping content of stannum in ITO ceramic target is C ≈10 3114%(wt),which are both in accordance with the experimental results.This theory is also appropriate for the optimum doping content problems of other electronic films.
【CateGory Index】: TN304.21
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