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《Chinese Journal of Semiconductors》 2002-09
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Computer-Aided Design of RF-MEMS Switch

Wei Huazheng 1,Guo Fangmin 1,Lai Zhongsheng 1,Zhu Shouzheng 1,Zhu Ziqiang 1, Li Xiaowei 2,Cheng Zhiqun 2 and Sun Xiaowei 2(1 College of Information Science & Technology,East China Normal University,Shanghai 200062,China) (2 Shanghai Institute o  
A RF MEMS switch is designed by computer aided design (CAD) method.The transmission line loss of the coplanar waveguide (CPW) and the equivalent circuit model of the microelectromechanical systems (MEMS) switch are simulated using Agilent ADS software.The actuation voltage of the switch is also analysed by ANSYS software.Significant simulation results of the shunt capacitive switch,operating at 35GHz,are obtained.
【Fund】: 国家基础研究发展基金 (973 ) (No.G19990 3 3 10 -5 );; 国家杰出青年基金 (批准号 :6992 5 40 9);; 上海市 AM基金 (No.0 0 0 4)资助项目~~
【CateGory Index】: TP391.72
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【References】
Chinese Journal Full-text Database 2 Hits
1 Sun Jianhai and Cui Dafu(State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China);Designs and Analysis of Series Capacitive RF-MEMS Switches[J];Chinese Journal of Semiconductors;2005-12
2 WU Qing-xin1,CHEN Guang-hong1,YU Ying2,LUO Zhong-zi3(1.Department of Electronic Information Engineering,Suzhou Vocational University,Suzhou 215104,China;2.College of Telecommunications & Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China;3.Sah Pendung MEMS Research Center,Xiamen University,Xiamen 361005,China);Study on key fabrication process of RF MEMS switch with cantilever structure[J];Transducer and Microsystem Technologies;2009-09
【Citations】
Chinese Journal Full-text Database 1 Hits
1 MAO Junfa(School of Electronics and Information Technology,Shanghai Jiaotong University,Shanghai 200030);Microwave Integrated Circuits on Silicon Substrates[J];Journal of Microwares;2001-01
【Co-citations】
Chinese Journal Full-text Database 5 Hits
1 LONG Yong-fu, GUO Jie-rong, HU Wei-wen (Department of Physics and Electronics, Hunan University of Arts and Science, Changde, Hunan, 415000);Recent Progress of Research on Porous Silicon in RF/Microwave Integrated Circuits[J];;2005-03
2 ZHAO Ji xiang,MAO Jun fa (Dept of Electronic Engineering,Shanghai Jiaotong University,Shanghai 200030,China);Characteristic Analysis for CPW′s on Thin Substrate[J];Acta Electronica Sinica;2003-12
3 BI Han, LI Zhengfan, ZHAO Xia(School of Electronics and Information, Shanghai Jiaotong University, Shanghai, 200030, P R China);A Low Cost 5.5-GHz 30-dB CMOS Broadband Limiting Amplifier[J];Microelectronics;2003-05
4 SHI Dan, LI Zheng-fan, BI Han(Shanghai Jiaotong Univ. Microwave Department, Shanghai 200030);The Design and Realization of 4GHz 23dB CMOS Limiting Amplifier[J];Microelectronics & Computer;2005-04
5 ZHENG Liang,QIN Hui-bin,HU Ji,XU Jun-ming,SONG Kai-xin(Institute of Electron Device & Application,Hangzhou Dianzi University,Hangzhou 310018,China);Improvement of NiZn Ferrite Thin Film on Transmission Property of Stacked Thin-film Transformers[J];Journal of Microwaves;2010-01
【Co-references】
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1 XIN Pei-sheng DING Ling SHI Yan-ling ZHU Zi-qiang LAI Zong-sheng (Institute of Infor. Scien. & Technology East China Normal University, Shanghai 200062, China);Application of AlSi alloy membrane in MEMS capacity switch[J];Semiconductor Technology;2001-12
2 MAO Hui-bing, XIN Pei-sheng, HU Mei-li, LAI Zong-sheng(Dept. of Electronic Science and Technology, East China Normal University , Shanghai 200062,China);Fabrication and function test of the micromechanicalMW/RF switches[J];Semiconductor Technology;2002-11
3 LI Cheng-shi1, GUO Fang-min1,2,LAI Zong-sheng1,GE Yu-ping1, XU Xin1,ZHU Zi-qiang1,LU Wei2 (1.Department of Electrical Engineering, East China Normal University, Shanghai 200062,China; 2.National Lab. for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,China);Simulation and Fatigue Analysis of MEMS RF Cantilevered Beam Switch[J];Semiconductor Technology;2004-10
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5 YAN Gui-zhen,ZHANG Da-cheng,LI Ting,WANG Ying (Institute of Microelectronics,Peking University,Beijing100871,China);Self-aligned OHR technology for metal lift-off an d substrate etching[J];Semiconductor Information;2002-01
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7 HU Xiao-dong (Hebei Semiconductor Research Institute,Shijiazhuang050051,China);Failure mode and mechanism of a MEMS relay[J];Semiconductor Information;2002-10
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9 GU Hong ming 1,L Miao 2,SHAN Fu qi 1,GAO Bao xin 1,LIANG Chun guang 2 (1. Department of Electronic Engineering,Tsinghua University,Beijing 100084,China; 2. Hebei Semiconductor Research Institute,Shijiazhuang 050051,China);Transient field analysis for series MEMS switch[J];Micronanoelectronic Technology;2003-Z1
10 ZHU Jian 1,2 ,YU Yuan wei 2,LU Le 2,JIA Shi xing 2,ZHANG Long 2 (1. Dept. of Instrument Science & Engineering, Southeast University, Nanjing 210096, China; 2. Nanjing Electronic Devices Institute, Nanjing 210016, China);Two membrane microwave MEMS switches[J];Micronanoelectronic Technology;2003-Z1
【Secondary References】
Chinese Journal Full-text Database 5 Hits
1 Sun Jianhai1,Cui Dafu 1, ,and Xiao Jiang2 (1 State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China)(2 State Key Laboratory of Microwave Image Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China);Fabrication and Numerical Simulation of a MicromachinedContact Cantilever RF-MEMS Switch[J];Chinese Journal of Semiconductors;2006-02
2 JI Kui,HE Xun-jun,YIN Jing-hua(School Applied Science,Harbin University Science and Technology,Harbin 150080,China);Design and Simulation of Low Threshold Voltage MEMS Capacitive Switches[J];Journal of Harbin University of Science and Technology;2008-04
3 WEI De-fang~1 ZHAO Ji-de~1 DONG Yong-mian~1 YANG Ren-di~2 (1. LU DONG University,Shandong,Yantai 264025,China; 2.Lai Zhou the Fhird high School Shandong,Yantai Laizhou 261400,China);Dual-band microstrip antenna design of MEMS complex cavity[J];Laser Journal;2007-03
4 WEI De-fang,ZHAO Ji-de(Institute of Physical & Electric,Ludong University,Yantai 264025,China);A novel dual-band MEMS LNA design[J];Laser Journal;2009-04
5 YAN Wei(School of Electronics and Information Engineering,Nanjing University of Information Science&Technology,Nanjing 210044,China);Design and Simulation of Low-voltage Driving RF MEMS Switches[J];Modern Electronics Technique;2010-17
【Secondary Citations】
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1 Qian Wei; Jin Xiaojun; Zhang Jishu; Cheng Peiyi; Lin Huiwan; Qian Peixin(Institute of Microelectronics. Tsinghua University, Beijing 100084);The Avalanche Effects on Current and Voltage Characteristics in SiGe HBT[J];ACTA ELECTRONICA SINICA;1998-08
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