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《Chinese Journal of Semiconductors》 2003-01
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ZnO Films Synthesized by Solid-Source Chemical Vapor Deposition with c-Axis Parallel to Substrate

Lü Jianguo,Ye Zhizhen,Zhang Yinzhu,Huang Jingyun and Zhao Binghui(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)  
ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.
【Fund】: 国家重点基础研究专项基金资助项目 (批准号 :G2 0 0 0 0 683 -0 6)~~
【CateGory Index】: TN304.21
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