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《Chinese Journal of Semiconductors》 2003-01
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Investigation on Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of ZnS Thin Films

Zhang Xitian 1,2 ,Liu Yichun 2,Zhi Zhuangzhi 2,Zhang Jiying 2,Shen Dezhen 2, Xu Wu 2,Zhong Gouzhu 2 and Fan Xiwu 2(1 Department of Physics,Harbin Normal University,Harbin 150080,China) (2 Open Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics, The Chinese Academy of Sciences,Changchun 130021,China)  
High quality nanocrystalline ZnO film is prepared by using thermal oxidation of ZnS thin film,grown on a SiO 2 subtract by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) patterns show that ZnO thin film has a hexagonal wurtzite structure.In photoluminescence (PL) measurements,a strong PL with a full width at half maximum (FWHM) of 62meV around 3.3eV is observed from the samples oxidized at 900℃ at room temperature.The PL intensity ratio of the UV emission to the deep-level emission is 80 at room temperature,providing evidence of the high quality of the nanocrystalline ZnO films.Afterwards,ultraviolet lasing from the ZnO thin films is observed at room temperature.
【Fund】: 中国科学院百人计划项目;; 国家自然科学基金 (批准号 :698962 60 );; 长春光学精密机械与物理研究所创新基金;; 国家教委杰出青年教师基金;; 吉林省杰出青年学者计划;; 黑龙江省自然科学基金资助项目~~
【CateGory Index】: TN304.21
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