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《Chinese Journal of Semiconductors》 2003-02
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Photoluminescence of ZnO Films Deposited on Si Substrate by RF Magnetron Sputtering

Wang Qingpu,Zhang Deheng and Xue Zhongying(School of Physics and Microelectronics,Shandong University,Jinan 250100,China )  
Highly orientated polycrystalline ZnO films are deposited on Si substrates at room temperature by using RF magnetron sputtering.A strong violet photoluminescence(PL) located at 402nm and a weak UV PL located at 384nm are observed when excited with 300nm light.The former PL originated from the electron transition from shallow donor levels of oxygen vacancies to the top of valence band and the later is generated due to electron transition from conduction band to valence band.With an increase in intensity of the excitation light,the violet emission peak increases super linearly and the UV emission increases linearly.After high temperature annealing in oxygen the crystallinity of obtained films is improved,the violet emission become weak and the UV emission gets strong.
【Fund】: 国家自然科学基金 (批准号 :60 0 760 0 6);; 教育部博士点基金 (批准号 :2 0 0 0 0 42 2 0 4)资助项目~~
【CateGory Index】: TN304.21
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