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《Chinese Journal of Semiconductors》 2003-02
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Oxidants in ZnO Thin Film Growth by LP-MOCVD

Chen Tong,Gu Shulin,Ye Jiandong,Zhu Shunmin,Qin Feng,Hu Liqun, Zhang Rong,Shi Yi and Zheng Youdou(Department of Physics,Nanjing University,Nanjing 210093,China)  
The experiment proves that plasma ionizing in different oxidants is critically important for depositing the ZnO film.High quality c axis oriented single crystal films are grown using CO 2 and O 2 as oxidant,respectively.The ionizing efficiency as a function of the exciting potential,pressure for different oxidant gases is calculated.The influences of the concentration of oxygenic ions on the deposition velocity and growth quality are studied theoretically by the step flow model.Due to the results of XRD,PL,AFM and AES,high ionizing efficiency of CO 2 oxidant gives S1 sample exhibits a lower growth rate and smoother surface.While sample S2,which uses O 2 as its oxidant,obtains high structure properties.This confliction reveals the unavoidable problem of the nonlinear optimization of film properties with respect to the concentration of oxidant ions and contaminations introduced by oxidants.
【CateGory Index】: TN304.2+
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