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《Chinese Journal of Semiconductors》 2003-06
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Preparation and Characterization of Al Doped ZnO Thin Films Textured on Glass at Low Temperature by RF Reactive Co-Sputtering

Shao Lexi 1,2,Chang Kuenhuei 2 and Hwang Heuyliang 2(1 School of Information Science and Technology,Zhanjiang Normal College,Zhanjiang 524048,China) (2 Institute of Electronic Engineering,National Tsing Hua University,Tsinchu 300,China)  
Al doped zinc-rich ZnO thin films are prepared at low temperature (200℃) using RF reactive co-sputtering technique with metal zinc and aluminum as target and soda lime glass as substrates.The morphology and microstructure,compositions and optical properties of the deposited films are characterized by employing SEM,EDX,α-step,XRD,and UV-VIS methods.The influences of O 2/Ar ratio in the reactive gases and RF power on growth rate,structure,and optical properties are investigated.The results show that growth rate of the deposited films is mainly determined by RF power while stoichiometry of the composition and the structures have strong dependence on O 2/Ar ratio in the reactive gases.By optimizing the processing parameters,strong textured single crystalline ZnO films with the orientation of (0002),a transmittance of over 85% and a resistivity of 10 -1~10 3Ω·cm are obtained without post treatment of annealing.These properties can well meet the requirements for the applications of ZnO film,especially as the window layers of Cu-Ⅲ-Ⅳ 2 thin film solar cells.
【Fund】: 广东省教育厅自然科学研究基金 ( No.2 0 0 0 48);; 台湾国科会专题研究计划 ( No.90 -2 2 15 -E-0 0 7-0 16)资助项目~~
【CateGory Index】: TN304.055
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