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《Chinese Journal of Semiconductors》 2003-07
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Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films

Lü Jianguo,Ye Zhizhen,Huang Jingyun,Zhao Binghui and Wang Lei(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)  
The influence of postdeposition annealing on the crystallinity of ZnO films is investigated.ZnO films are prepared by DC reactive magnetron sputtering,and then annealed in oxygen ambient at different temperature (200~1000℃).The properties are examined by X-ray diffraction (XRD),atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).An annealing model for ZnO films is proposed,through which the effect of annealing treatment on the crystallinity of ZnO films is discussed in detail.The as-grown films possessed c -axis orientation,which is enhanced in the annealing process.When the annealing temperature shows up,the tensile stress along c -axis orientation decreases,while the compressive stress increases;at the same time,the grain size of the film is reduced,which results in a much rougher surface.ZnO films possessed a better crystallinity at the stress release temperature (SRT) about 640℃,such as high c -axis orientation,almost stress free and low surface roughness.
【Fund】: 国家重大基础研究项目 (No.G2 0 0 0 0 683 -0 6);; 国家自然科学基金重点 (批准号 :90 2 0 10 3 8)资助项目~~
【CateGory Index】: TN304.055
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