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《Chinese Journal of Semiconductors》 2004-02
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Long Wavelength Resonant Cavity Photodetectors with InP/Air-Gap Bragg Mirrors

Huang Hui1,Wang Xingyan1,Wang Qi1,Huang Yongqing1,Ren Xiaomin1,Gao Junhua2, Zhang Shengli2,Liu Yu2,Zhu Ninghua2,Ma Xiaoyu2,Yang Xiaohong2 and Wu Ronghan2(1 Beijing University of Posts and Telecommunications,Beijing 100876,China) (2 Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China)  
An InP based resonant cavity enhanced (RCE) photodetector is demonstrated.InP/air-gap distributed Bragg reflector (DBR) with high reflectivity is fabricated by using selective wet etching.Moreover,long wavelength RCE photodetectors with InP/air-gap DBR is realized for the first time.The quantum efficiency of 59% at 1.510μm and 3dB bandwidth at 8GHz are achieved with devices active area of 50μm×50μm.
【Fund】: 国家高技术研究发展计划 (编号 :2 0 0 2 AA3 12 2 9Z);; 国家自然科学基金 (批准号 :90 2 0 10 3 5 )资助项目~~
【CateGory Index】: TN929.11
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【References】
Chinese Journal Full-text Database 2 Hits
1 Li Chuanbo,Mao Rongwei,Zuo Yuhua,Cheng Buwen,Shi Wenhua,Zhao Lei, Luo Liping,Yu Jinzhong and Wang Qiming (State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China);Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector[J];Chinese Journal of Semiconductors;2004-12
2 Mao Rongwei1,Zuo Yuhua1,Li Chuanbo1,Cheng Buwen1,Teng Xuegong1, Luo Liping1,Zhang Heshun2,Yu Jinzhong1,and Wang Qiming1(1 State Key Joint Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China) (2 Beijing Chemical Plant,Beijing 100022,China);Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors[J];Chinese Journal of Semiconductors;2005-02
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 SUN Yan-jie,HE Shan-hu,ZHEN Cong-mian, GONG Heng-xiang,YANG Ying-hu,WANG Yin-yue (Dept.of Physics,Lanzhou University, Lanzhou 730000,China)$$$$;Measurement of specific contact resistance of metal/semiconductor using CTLM[J];SEMICONDUCTOR OPTOELECTRONICS;1999-04
2 LIU Jia zhou, LI Ai zhen, ZHANG Yong gang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences,Shanghai 200050,China)$$$$;Recent Progress in Ultra-high-speed PIN Photodetector for Optical Communications[J];Semiconductor Optoelectronics;2001-04
3 ZHONG Yuan 1 , HUANG Yong qing 1 , REN Xiao min 1 , NIU Zhi chuan 2 , WU Rong han 2 (1. Optical Communication Center, Beijing University of Posts and Telecommunications, Beijing 100876, CHN; 2. Institute of Semiconductors, Chi;Analysis of Resonant Cavity Enhanced (RCE) Photodetector with Flat-top and Steep-edge Response[J];Semiconductor Optoelectronics;2002-01
4 LOU Li fang, SHENG Zhong yan (State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, CHN);The Implementation Techniques of WDM Devices in Optical Communication[J];Semiconductor Optoelectronics;2003-01
5 ZHOU Zhen, HUANG Yongqing, REN Xiaomin(Center of Optical Communication,Beijing University of Posts and Telecommunications, Beijing 100876, CHN);Wafer Bonding Technology and Its Applications in Vertical Cavity Devices[J];Semiconductor Optoelectronics;2003-04
6 HAO Guo-qiang, ZHANG Yong-gang, LIU Tian-dong, LI Ai-zhenhai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050,C HN);The Dark Current Characteristics of InGaAs PIN Photodetectors[J];Semiconductor Optoelectronics;2004-05
7 HUANG Cheng, HUANG Hui, WANG Wen-juan, HUANG Yong -qing (Center of Optical Communication,Beijing University of Post s & Telecommunications,Beijing 100876,CHN);Design of a Tunable InP-based Long Wavelength Pho todetector with Flat-top and Steep-edge Response[J];Semiconductor Optoelectronics;2005-02
8 HOU Shi-hua~(1,2),SUN Jie~(2),MAO Rong-wei~(2),Wu Xu-ming~(2),MA Xiao-yu~(2),TAN Man-qing~(2),CHEN Liang-hui~(2)(1.School of Physics Science and Technology,South China University of Technology,Guangzhou 510640,CHN;2.Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN);Micromachined Tunable Filter Based on InP/Air-gap Distributed Bragg Reflectors[J];Semiconductor Optoelectronics;2006-05
9 GAO Xin-jiang,ZHANG Xiu-chuan,CHEN Yang(Chongqing Optoelectronics Research Institute,Chonqging 400060,CHN);Device Model and Its Numerical Simulation of InGaAs/InP SAGCM-APD[J];Semiconductor Optoelectronics;2007-05
10 WANG Cheng-dong1,YANG Ji2,FENG Shi-wei1,ZHANG Yue-zong1,ZHUANG Si-xiang1,ZHANG Gong-chang1 (1.School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China 2.State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China);Development of High Responsivity InGaAs PIN Photodetectors[J];Micronanoelectronic Technology;2007-Z1
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 Chen Liqun and Li Cheng~(Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China);Design and Simulation of Si-Based Resonant-Cavity-Enhanced Waveguide Photodetectors[J];Chinese Journal of Semiconductors;2006-08
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