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《Chinese Journal of Semiconductors》 2004-06
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Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Yuan Guodong,Ye Zhizhen,Zeng Yujia,Lü Jianguo,Qian Qing,Huang Jingyun, Zhao Binghui and Zhu Liping(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)  
The p-type ZnO films with c -axis orientation are fabricated using Al and N codoping method by DC reactive magnetron sputtering.ZnO films are prepared on α-Al 2O 3(0001) substrate with different temperature.N acceptor comes from NH 3 and O 2 atmosphere,and Al donor dopant from Zn x Al 1-x ( x =0.9) targets.The properties are examined by X-ray diffraction(XRD),atomic force microscopy(AFM),second ion mass spectroscopy(SIMS),Hall measurement,and transmission spectra.The results show that the Al and N codoping ZnO films can be realized at 450℃,600℃ with a p-type conduction ,such as resistivity of 10 2~10 3Ω·cm,carrier density of 10 15 ~10 16 cm -3 Hall mobility of 0.5~1.32cm 2/(V·s).The presence of donor(Al) enhances N incorporation.The p-ZnO films have a transmittance about 90% in visible region and a band gap of 3.28eV at room temperature.The p-ZnO film obtained at 450℃ possesses a smaller size of grain and smoother surface.
【Fund】: 国家重点基础研究专项经费 (批准号 :G2 0 0 0 0 683 0 6);; 国家自然科学基金(批准号 :90 2 0 10 3 8)资助项目~~
【CateGory Index】: TN30421
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