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《Chinese Journal of Semiconductors》 2005-01
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Analysis of Bulk-Driven MOSFET and Design of Ultra-Low Voltage Operational Amplifier

Yin Tao,Zhu Zhangming,Yang Yintang,and Guo Lei(Microelectronics Institute,Xidian University,Xi’an 710071,China)  
The fundamental principles of the bulk-driven MOSFET,along with the frequency and noise characteristics,are discussed.The analysis and simulation of its low voltage characteristics are also made.Based on the PMOS bulk-driven technique,an ultra-low voltage operational amplifier is proposed.With 0.8V power supply,the dc open-loop gain of the amplifier is 74dB,the phase margin is 66° and the input offset voltage is 940μV with 110~798mV output voltage swing.
【Fund】: 国家自然科学基金资助项目 (批准号 :90 2 0 70 2 2 )~~
【CateGory Index】: TN722
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