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《Chinese Journal of Semiconductors》 2005-03
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Investigations on Mg-Doping of p-GaN

Jin Ruiqin,Zhu Jianjun,Zhao Degang,Liu Jianpin,Zhang Jicai,and Yang Hui(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)  
The orthogonal design method is employed to optimize the growth parameters of p typed GaN,such as the Mg flux,growth temperature,and Ⅴ/Ⅲ ratio.It is found that the hole concentration is reduced by excessively high Mg flux,high growth temperature,and great Ⅴ/Ⅲ ratio.The influence of the annealing temperature on the hole concentration of p typed GaN is also studied.The optimum annealing temperature is between 700 and 750℃.
【CateGory Index】: TN304
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【References】
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1 WANG Bao-lin,LI Chao-mu,ZENG Zheng-qing,LI Feng (The 55~(th) Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,China);INVESTIATION TECHNIQUE Mg-DOPING OF IMPROVEMENT GaN MATERIAL[J];Vacuum and Cryogenics;2009-04
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1 LV Man1,SI Xiao-kun2,3,4,YANG Li-jun5(1.Institute of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022;2.Institute of Applied Mathematics,Hebei Academy of Science,Shijiazhuang Hebei 050081,China;3.SJZJKSS Technology Co.,Ltd,Shijiazhuang Hebei 050081,China;4.Hebei Authentication Technology Engineering Research Center,Shijiazhuang Hebei 050081,China;5.Hebei Installation Engingerring Co.,Ltd,Shijiazhuang Hebei 050000,China.);The research of the GaN microelectronic devices[J];Journal of the Hebei Academy of Sciences;2011-01
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