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《Chinese Journal of Semiconductors》 2005-12
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Influences of Differently Shaped Quantum Dots on Elastic Strain Field Distributions

Liu Yumin 1,2,,Yu Zhongyuan 1,2,Yang Hongbo 1,2,and Huang Yongzhen3(1 School of Science,Beijing University of Posts & Telecommunications,Beijing 100876,China) (2 Key Laboratory of Ministry of Education for Optical Communication and Lightwave Technologies,Beijing 100876,China) (3 State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)  
Adopting the two-dimensional axis-symmetrical model,a systematic analysis of the elastic strain distribution of geometrically differently shaped quantum dots is conducted using the finite element method.The detailed results for the elastic strain distribution of lens,cylinder,pyramid,and cone-shaped quantum dots are given.These show that the shape of the quantum dot has obvious influences on both the normal and shear strain distributions,while not affecting the hydrostatic strain distributions.The hydrostatic strain distribution is almost the same in both the center axis and circumjacent path.The shear strain distributions are focused on the circumjacent path,and the extremas are located in the inflexion of the circumjacent path,while the other parts of the quantum dot,including the path along the center axis,have no shear strain.
【Fund】: 国家重点基础研究发展计划(批准号:2003CB314901);; 国家高技术研究发展计划(批准号:2003AA311070);; 集成光电子学国家重点联合实验室开放课题资助项目~~
【CateGory Index】: O471.1
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【References】
Chinese Journal Full-text Database 2 Hits
1 Zhang Chunling1,2,,Tang Lei3,Xu Bo2,Chen Yonghai2,and Wang Zhanguo2(1 College of Physics Science,Nankai University,Tianjin 300071,China)(2 Laboratory of Semiconductor Material Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(3 Physics Staff Room,Medical College of Chinese People's Armed Police Force,Tianjin 300162,China);Effect of Pretreatment of Cleaved Edges on Overgrowth[J];Journal of Semiconductors;2008-03
2 CHU Haijian~(1,2,+) CHEN Jiankang~3 WANG Jianxiang~2 1 College of Hydraulic Science and Engineering,Yangzhou University,Yangzhou 225009,China 2 Department of Mechanics and Aerospace Engineering,College of Engineering,Peking University,Beijing 100871,China 3 Mechanics & Materials Science Research Center,College of Engineering,Ningbo University,Ningbo 315211,China;ADVANCES IN THE STUDY OF PROPERTIES AND MECHANICS OF SEMICONDUCTOR QUANTUM DOT STRUCTURES[J];Advances in Mechanics;2007-04
【Citations】
Chinese Journal Full-text Database 1 Hits
1 Gong Qian, Liang Jiben, Xu Bo, Ding Ding, Wang Zhanguo(Institute of Semiconductors, The Chinese Academy of Sciences, Beijing\ 100083) Qiu Xiaohui, Shang Guangyi, Bai Chunli(Institute of Chemistry, The Chinese Academy of Sciences, Beijing\ 100080);Analysis of Atomic Force Microscopic Results of InAs Quantum Dots[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-08
【Co-citations】
Chinese Journal Full-text Database 4 Hits
1 Liu Yumin~(1,2),Yu Zhongyuang~(1,2),Yang Hongbo~(1,2),and Huang Yongzhen~3(1 School of Science,Beijing University of Posts & Telecommunications,Beijing 100876,China)(2 Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education,Beijing 100876,China)(3 State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Elastic Strain Field Distribution of a Self-Organized Growth Lensed-Shaped Quantum Dot by Finite Element Method[J];Chinese Journal of Semiconductors;2005-07
2 Jin Feng~1,Lu Huaxiang~1,Li Kai~2,Chen Yonghai~2,and Wang Zhanguo~2(1 Artificial Neural Networks Laboratory,Institute of Semiconductors,Chinese Academy of Science,Beijing 100083,China) (2 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China);Mathematical Morphology Based Algorithm to Measure Quantum Dots from AFM Photos[J];Chinese Journal of Semiconductors;2005-11
3 Zhang Daoli,Zhang Jianbing,Wu Qiming,Yuan Lin,and Chen Sheng(Department of Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China);Synthesis and Spectral Properties of InP Colloidal Quantum Dots[J];Chinese Journal of Semiconductors;2006-07
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【Co-references】
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1 SHI Wen-hua, LI Chuan-bo, WANG Qi-ming (State nese Academy of Sciences, Beijing 100083, CHN);Research Progress on the Growth of Ge/Si Quantum Dot[J];Semiconductor Optoelectronics;2004-04
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【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 WANG Song-bai(College of Physics and Informational Engineering,Fuzhou University,Fujian Fuzhou 350002 PRC);The Energy Band Structure of Round and Rectangle Sectional Quantum Wires in Low Dimensional Semiconductor GaAs[J];Jiangxi Science;2009-04
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