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《Chinese Journal of Semiconductors》 2006-02
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Growth of ZnO Single Crystal by Chemical Vapor Transport Method

Zhao Youwen,Dong Zhiyuan,Wei Xuecheng,Duan Manlong,and Li Jinmin(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)  
A ZnO single crystal is grown by a chemical vapor transport method.The size of the self-nucleated grown ZnO single crystal is 5mm×8mm through the control of temperature gradient of source and growth zones and the assistance of mass transport enhancement effect of carbon in the growth process.By using a GaN buffered sapphire substrate,a ZnO single crystal of 32mm diameter,4mm thick is obtained.PL spectroscopy and X-ray diffraction technique are used to characterize the properties and the quality of the ZnO single crystal.Thermodynamic phenomena of the single crystal growth process are also discussed.
【CateGory Index】: TN304.05
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【References】
Chinese Journal Full-text Database 3 Hits
1 Wei Xuecheng,Zhao Youwen,Dong Zhiyuan,and Li Jinmin(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Control of Vapor Transport Process of Large Size ZnO Single Crystal Growth[J];Chinese Journal of Semiconductors;2007-06
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【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Ye Zhizhen, Xu Weizhong, Zeng Yujia,Jiang Liu,Zhao Binghui,Zhu Liping, Lü Jianguo,Huang Jingyun,Wang Lei,and Li Xianhang (State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027,China);Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method[J];Chinese Journal of Semiconductors;2005-11
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3 Wei Xuecheng,Zhao Youwen,Dong Zhiyuan,and Li Jinmin(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Control of Vapor Transport Process of Large Size ZnO Single Crystal Growth[J];Chinese Journal of Semiconductors;2007-06
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【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 Zhang Fan,Zhao Youwen,Dong Zhiyuan,Zhang Rui,and Yang Jun(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Bulk Single Crystal Growth and Properties of In-Doped ZnO[J];Journal of Semiconductors;2008-08
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