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《Chinese Journal of Semiconductors》 2006-05
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Energy Band Structure and Conducting Characteristics of ITO Films

Zhang Zhiguo(Institute of Functional Material,Quanzhou Normal University,Quanzhou 362000,China)  
Using scanning electron micrographs and XRD analysis of ITO films,the energy band structures of equilibrium and non-equilibrium of ITO films are constructed.A model of the band-tail state distribution is built using the Kronig-Penney model.A never-before-reported hysteresis loop in the I-V curve is obtained in the measurement.The experimental results agree well with the theoretical data.By analyzing the mechanism behind the I-V characteristic,the model of the energy band structure is proved reasonable.The temperature characteristics of the ITO film measured show that the slope of the conductivity-temperature curve varies from a positive value to a negative one.
【CateGory Index】： O471.5
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【References】
Chinese Journal Full-text Database 5 Hits
1 Lin Yueming1,2,Han Maixing2,Zeng Xianghua2(1.Yang Zhou Hua Xia Integrated O/E System Co.,Ltd.,Yangzhou 225009,China;2.College of Physic Science and Technology,Yangzhou University,Yangzhou 225002,China);Improvement of ITO Thin Film Undercut on GaN-LED Chips[J];Semiconductor Technology;2009-05
2 Zhang Nan, Liu Jiaxiang, Zeng ShengNan (The State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China);Effect of Sn-Doping Content on the Electrical and Optical Properties of ITO Films by Colloid Method[J];Rare Metal Materials and Engineering;2008-01
3 ZHANG Zhi-guo (Institute of factional material,Quanzhou Normal University,fujian quanzhou 362000.China);Properties of Sn_(1-x)(Cu_(1-y)In_y)_xO nesa prepared by reaction evaporation[J];Infrared and Laser Engineering;2006-S2
4 ZHANG Zhi-guo(Institute of functional material,Quanzhou Normal University,Fujian 362000,China);An Over-voltage Endurance Mechanism on Tin Oxide Electric Heating Film[J];Journal of Quanzhou Normal University;2009-02
5 GUO Ling-ling,ZHENG Guang-yu,ZHANG Zhi-guo(School of Science and Technology,Quanzhou Normal University,Quanzhou 362000,China);Preparation of Sn_(1-x)(In_(1-y)Cu_y)_xO films[J];Physics Experimentation;2006-09
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 JIA Jia(Shanghai Institute of Technical Physics, Shanghai 200083, China);Sputtering technology of nano thin films[J];Semiconductor Technology;2004-07
2 CHEN Jian,ZHANG Jiang,GAO Shan-min,QU Rong-jun (School of Chemistry and Materials Science,Ludong University,Yantai 264025,China);ITO Thin Films Prepared by the Sol-Gel Spin-Coating Method[J];Micronanoelectronic Technology;2007-03
3 Su Changhou/Beijing Polytechnic University,Beijing,100022Pang Dawen/Beijing Polytechnic University,Beijing,100022Zhang Zhiguo/Inner Mongolia Techers University,Huhchaote 010022;Study on transparant conducting films of complex SnO_2/ITO[J];Chinese Journal of Semiconductors;1991-11
4 Lin Yuanhua, Zhang Zhongtai(Material Science and Engineer Department, Tsinghua University, Beijing\ 100084)Yuan Fangli, Li Jinlin(Institute of Chemical Metallurgy, The Chinese Academy of Sciences, Beijing\ 100080)Received 1 November 1998, revised manuscr;Preparation of ZnO Conductive Ceramics and Its Properties[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-10
5 CHEN Meng, BAI Xue\|dong, HUANG Rong\|fang and WEN Li\|shi(Institute of Metal Research, The Chinese Academy of Sciences, Shenyang\ 110015, China)Received 10 December 1998, revised manuscript received 20 March 1999;Structure and Conductive Mechanism of ITO and ZAO Films[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-04
6 Xu Weizhong,Ye Zhizhen,Zhou Ting,Zhao Binghui,Zhu Liping,and Huang Jingyun(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China);MOCVD Growth of p-Type ZnO Thin Films by Using NO as Dopant Source[J];Chinese Journal of Semiconductors;2005-01
7 Yu Xuhu1,Ma Jin1,Ji Feng1,Wang Yuheng1,Wang Cuiying2,and Ma Honglei1(1 School of Physica and Microelectronics,Shandong University,Ji’nan 250100,China) (2 Laboratory of Physics,Taishan Medical University,Tai’an 271000,China);Properties of Transparent Conducting ZnO∶Ga Films Prepared by RF Magnetron Sputtering[J];Chinese Journal of Semiconductors;2005-02
8 Zhao Junqing, Ma Jin, Li Shuying, Ma Honglei(Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100);Structure and Electro Optical Properties of ITO Films on Organic Substrates[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-10
9 Ma Jin, Zhao Junqing, Li Shuying, Ma Honglei(Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100);Structural and Conductive Properties of ITO Films Deposited on Organic Substrate[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-11
10 WANG Shulin,XIA Donglin (The Key Laboratory of Silicate Materials Science and Engineering, Ministry of Education, China, Wuhan University of Technology, Wuhan 430070, P.R. China);Fabrication Techniques and Development of ITO Film[J];Glass & Enamel;2004-05
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 JIANG Wei,WU Guang-ming,WANG Yi,XING Guang-jian,HAN Bin(Beijing Institute of Petrochemical and Technology,Beijing 102617,China);Research on Photoelectric Characteristics of ITO Film Prepared by DC Magnetron Sputtering at low Temperature[J];Nanoscience & Technology;2009-04
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