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《Chinese Journal of Semiconductors》 2006-12
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Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands

Tang Haixia~ and Wang Qiming(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)  
The principle of the enhancement of nc-Ge/Si islands by a photonic crystal single-defect cavity is explained.For a photonic crystal slab with a thickness of 300nm,the resonant wavelength of a photonic crystal single-defect cavity based on Ge/Si islands as a function of a and r/a is calculated with the 3D FDTD method and is analyzed theoretically.For fixed r/a and h,the wavelength increases sub-linearly with the increase of lattice constant.For fixed a and h,the wavelength decreases linearly with the increase of r/a.
【Fund】: 国家自然科学基金资助项目(批准号:60336010 60537010)~~
【CateGory Index】: TN204
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