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《Journal of Semiconductors》 2008-03
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A Novel Interconnect Crosstalk Parallel RLC Analyzable Model Based on the 65nm CMOS Process

Zhu Zhangming,Qian Libo,and Yang Yintang(Institute of Microelectronics,Xidian University,Xi'an 710071,China)  
Based on the 65nm CMOS process,a novel parallel RLC coupling interconnect analytical model is presented synthetically considering parasitical capacitive and parasitical inductive effects.Applying function approximation and model order-reduction to the model,we derive a closed-form and time-domain waveform for the far-end crosstalk of a victim line under ramp input transition.For various interconnect coupling sizes,the proposed RLC coupling analytical model enables the estimation of the crosstalk voltage within 2.50% error compared with Hspice simulation in a 65nm CMOS process.This model can be used in computer-aided-design of nanometer SOCs.
【Fund】: 国家自然科学基金(批准号:60676009);; 国家杰出青年基金(批准号:60725415)资助项目~~
【CateGory Index】: TN432
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