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《Journal of Semiconductors》 2008-03
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Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs

Zhang Ping,Liu Junlin,Zheng Changda,and Jiang Fengyi(Engineering Research Center for Luminescence Materials and Devices of the Education of Ministry,Institute of Material Science,Nanchang University,Nanchang 330047,China)  
We transfer GaN based LED epitaxial materials grown on a Si substrate to a new Si substrate and fabricate flip blue LED chips.Photoelectric properties of these chips with different n-electrode etching depths are researched.An accelerated aging experiment on a testing board is studied under a high driven current of 500mA for the chips of 200μm×200μm before incised.The results show that the chips with 0.8 and 1.2μm etching depths have lower forward voltage and slower light decay than the chips with 0.5μm etching depth.Meanwhile,the ESD is relatively steadier with aging time.Additionally,the ESD of chips with 0.8μm etching depth is larger than the chips with 1.2μm.
【CateGory Index】: TN304
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