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《CHINESE JOURNAL OF SEMICONDUCTORS》 1995-10
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Influence of Annealing on Formation of β-FeSi_2

Chen Xiangdong;Wang Lianwei;Lin Xian;Lin Chenglu and Zou Shichang (State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy,The Chinese Academy of Sciences. Shanghai 200050)  
Abstract FeSi2 thin film was prepared by means of Reactive Deposition-Solid Phase Epotaxy.X-ray Diffraction analysis shows that relatively lower temperature and long duration post-annealing process can improve the film quality.Si diffusion in β-FeSi is investigated by Rutherford Backscattering Spectrometry,and the mechanism of β-FeSi2 formation is discussed.
【Fund】： 上海市重大自然科学基金
【CateGory Index】： O472.2
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