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《CHINESE JOURNAL OF SEMICONDUCTORS》 1996-11
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Preparation and Characterization of High-Quality ZnO Film on Silicon Substrate by DC Reactive Magnetron Sputtering

Li Jianguang;Ye Zhizhen; Zhao Binghui and Yuan Jun (State Key Asb.of Silicon Materials,Zhejiang University, Hangzhou 310027)Received 10 March 1996, revised manuscript received 4 May 1996  
Abstract High-quality 2nO films were prepared on silicon substrate by DC reactive magnetron sputtering. The films were characterized by X-ray Photoelectron Spectroscopy(XPS)and X-ray Diffraction(XRD) analysis. The nano-ZnO films grow at C axis orientation and the full width at half maxium (FWHM) is only about 0. 7°.
【CateGory Index】: TN304.25
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