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《CHINESE JOURNAL OF SEMICONDUCTORS》 1999-02
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GaN Dawn of 3rd Generation Semiconductors

Liang Chunguang, Zhang Ji(13th Inetitute of Ministry of Electronic Industry, Shijiazhuang\ 050051)  
Abstract Since successfully fabricating blue GaN/GaInN LEDs,Ⅲ Ⅴ nitrides probably become the shiniest star in compound semiconductors research. This paper briefly introduces the basic properties of the nitrides. Then, it discusses the material growth techniques including the choice of substrate and epitaxial methods. Finally, it presents the development of the GaN based devices,such as LEDs, LDs,FETs and detectors,also gives the application and the future prospect of the nitride devices.
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