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《Acta Scicentiarum Naturalum Universitis Pekinesis》 1992-01
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Current-induced Changes on Absorption Coefficient and Refractive Index at Linearly Polarized Light in Undoped Thin GaAs Layer Grown by MOVPE

WANG Dehuang, WANG Weili, LI Guitang(Department of Physics, Peking Uniuesity; SemiconductorInstitute Region, Integrated Optoelectronics Laboratories of China)DUAN Shukun (Institute of Semiconductors, Academia Sinica, Beijing)  
The experimental investigations on the current-induced changes of absorption coefficient and refractive index at the linearly polarized light in undoped thin GaAs layer on the order of micrometer grown by MOVPE are reported. It found that the relations between the current-induced changes of the absorption coefficient (△σ) or the refractive index (△n) and wavelength (λ) is a nonlinear with a pulse-shaped as injected current. △σ. △n and the full width at half maximum in △σ-λ spectrum or △n-λ spectrum is markely increased by increased current. respectively. The wavelength (λp) at maximum in △σ-λ spectrum or △n-λ spectrum is also moved to long wavelength edge as increased current. The optical nonlinearities effect caused by current in undoped thin GaAs layer grown by MOVPE is useful for underlying physics. designed and improved properties GaAs optoelectronics devices and integrated optic elements with a multi -thin layers structure working by current.
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Chinese Journal Full-text Database 10 Hits
1 WANC Dehuang WANG Weili LI Guitang(Depaartment of Physics,Peking University;Semiconductor Institucte; Region, Integrated Optoelectronics Laheratorzes,Beijing,100871)ZHUANG Wanre DUAN Shukun(Semiconductor Institute Region,Integrated Optoelectronics Laborat;Exp6Fimental Investigation on Laser-Induced Change of Absorption Coefficient Near Infrared in Undoped GaAs Film[J];ACTA SCICENTIARUM NATURALUM UNIVERSITIS PEKINESIS;1994-05
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