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《Acta Scicentiarum Naturalum Universitis Pekinesis》 1992-01
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Current-induced Changes on Absorption Coefficient and Refractive Index at Linearly Polarized Light in Undoped Thin GaAs Layer Grown by MOVPE

WANG Dehuang, WANG Weili, LI Guitang(Department of Physics, Peking Uniuesity; SemiconductorInstitute Region, Integrated Optoelectronics Laboratories of China)DUAN Shukun (Institute of Semiconductors, Academia Sinica, Beijing)  
The experimental investigations on the current-induced changes of absorption coefficient and refractive index at the linearly polarized light in undoped thin GaAs layer on the order of micrometer grown by MOVPE are reported. It found that the relations between the current-induced changes of the absorption coefficient (△σ) or the refractive index (△n) and wavelength (λ) is a nonlinear with a pulse-shaped as injected current. △σ. △n and the full width at half maximum in △σ-λ spectrum or △n-λ spectrum is markely increased by increased current. respectively. The wavelength (λp) at maximum in △σ-λ spectrum or △n-λ spectrum is also moved to long wavelength edge as increased current. The optical nonlinearities effect caused by current in undoped thin GaAs layer grown by MOVPE is useful for underlying physics. designed and improved properties GaAs optoelectronics devices and integrated optic elements with a multi -thin layers structure working by current.
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 WANC Dehuang WANG Weili LI Guitang(Depaartment of Physics,Peking University;Semiconductor Institucte; Region, Integrated Optoelectronics Laheratorzes,Beijing,100871)ZHUANG Wanre DUAN Shukun(Semiconductor Institute Region,Integrated Optoelectronics Laborat;Exp6Fimental Investigation on Laser-Induced Change of Absorption Coefficient Near Infrared in Undoped GaAs Film[J];ACTA SCICENTIARUM NATURALUM UNIVERSITIS PEKINESIS;1994-05
2 WANG Dehuang\ WANG Weili (National Laboratory for Superlattices and Miorostructures, Department of Physics, Peking University, Beijing, 100871) CHENG Humin\ MA Jiming (Department of Chemistry, Peking University, Beijing, 100871) MAO\ Jietai (Departmen;Room Temperature Optical Absorption Spectra of Nanometer CuCl Clusters[J];ACTA SCICENTIARUM NATURALUM UNIVERSITIS PEKINESIS;1996-03
3 WANG Dehuang (National Laboratory for Superlattices and Microstuctures, Department of Physics,Peking University,Beijing,100871) CHENG Humin (Department of Chemistry,Peking University,Beijing,100871) LIANG Ruisheng\ TANG Zhelie (Department of Physics,;Determination of Band gap in SnO 2 Nanoclusters at Room Temperature[J];ACTA SCICENTIARUM NATURALUM UNIVERSITIS PEKINESIS;1997-05
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6 Zhou Wenying;Xu Yuanhua, (Department of Electronic Engineering);SEM ANALYSIS OF CROSS SECTIONS FOR SEMICONDUCTOR CHIP[J];Journal of Fudan University;1988-03
7 DU Xiao-qing, CHANG Ben-kang, ZONG Zhi-yuan, QIAN Yun-sheng (College of Electronic Engineering and Opto-ElectronicTechnique, Nanjing University of Science and Technology, Nanjing 210094, China);Evaluation of property parameters of NEA photocathode[J];Opto-electronic Engineering;2002-S1
8 Chen Xuequan; Luo Yaohuang(Dept. of Physics, Yunnan Univ., Kunming,650091);The Formulae for Calculating Carrier Lifetimes in Cylindrical Silicon Ingot[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1995-04
9 Ren Xianpu a,Liu Xinfu b,Huang Yuhui b,Liu Chunru a,Zhao Xiaoran b,Zhao Limin b(a.School of Information Engineering;b.School of Mechanical Engineering,Hebei University of Technology,Tianjin 300130,China);Research on the Micro-Area Sheet Resistance Test System Based on EIT Technology[J];Semiconductor Technology;2009-10
10 WANG Dehuang, WANG Weili (Department of Physics, Peking University, Semiconductor Institute Region,National Integrated Optoelectronics Laboratory, Beijing 100871) DUAN Shukun, ZHUANG Wanru (Institute of Semiconductors, Academia Sinica, Semiconductor Institute Region, National Integrated Optoelectronics Laboratory, Beijing 100083);Experimental study on optical transmission spectra using laserirradiated GaAs film[J];Chinese Journal of Lasers;1993-11
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