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Synthesis of high pure nanometer SiC powders by laser method and its production rate

ZHAN Ke-tao 1 XIAN Quan gang 2 ZHENG Feng 2 LIANG Yong 2 DUAN Xue 1 (1. College of Science, The Key Laboratory of Science and Technology of Controllable Chemical Reactions, Ministry of Education, Beijing University of Chemical Technology,  
In this paper, spherical and ideal nanometer SiC powders with high purity and low agglomeration were synthesized by Laser Induced Chemical Vapor Deposition (LICVD) method with SiH 4 and C 2H 4 as starting materials. The powders produced were characterized by chemical analysis, XRD, TEM and BET techniques. The results show that the powders of β SiC crystallization has a purity of above 98% of SiC in weight with average diameter of 20?nm and less than 1% oxygen content in weight that is mainly absorbed on the surface of the powders. In addition, two formulas for calculation of the theoretical production rate of nanometer SiC powders synthesized by LICVD were conducted from the energy exchange between laser beam and reactants of SiH 4 and C 2H 4 and the flow rate of SiH 4, respectively. The two formulas are basically coincident with the actual SiC production rate of more than 200?g/h, and the one obtained from energy exchange points out the direction of enlarging production rate of SiC powders and adjusting process parameters, so it has a theoretical and practical meaning to the industrial production.
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