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《Journal of University of Science and Technology Beijing》 2008-05
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Convective effects during unidirectional solidification

ZHANG Guozhi,FENG Yanhui,ZHANG Xinin,NIE Hong School of Mechanical Engineering,University of Science and Technology Beijing,Beijing 100083,China  
Directional solidification experiments were carried out using the analogue casting system of NH4Cl-H2O solution by cooling it from below.The transient velocities of fluid flow within the micro-channel of mushy layer were measured by using observation facility and tracer coal particles of 30 μm in diameter.It turned out that during the solidification process,the mean solid fraction of mushy layer descended rapidly at first,so the mushy layer got more permeable and natural convection was more likely to occur.When the mean solid fraction was down to 0.42,and closed to the smallest value of 0.38,and the equivalent Reynolds number exceeded the critical value,about 247,plume convection with associated micro-channel occurred in the mush.With the expanding of channel width,the solution of liquid region,whose temperature was higher than that of mushy layer,flowed into the micro-channel.The convection within the channel was found to consist of upward flow and downward flow.The counter flow advected heat away and solute which was favorable to solidification,so that solution within the channel recrystallized.
【Fund】: 国家自然科学基金资助项目(No.50676010)
【CateGory Index】: TG111.4
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【Co-citations】
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1 WANG Yue 1,2 ,SONG Bing wen 1,LIU Chao wang 1,WANG Jing yu 1, YANG Yu ling 1,JIE Wan qi 2,ZHOU Yao he 2 (1.Kunming Institute of Physics,Kunming 650223,China; 2.National Key Laboratory of Solidification Processing,Northwest Polytechnical;The Choice of Growth Technology for HgCdTe Epitaxial Growth by MOCVD[J];SEMICONDUCTOR OPTOELECTRONICS;2000-04
2 ZENG Qingke(Dept.of Physics,Guangxi Normal University,Guilin 541001)ZENG Xianfu(South China University of Technology,Guangzbou 510641);Current-controlled LPE growth of In_xGa_(1-x)As_yP_(1-y)[J];SEMICONDUCTOR OPTOELECTRONICS;1995-02
3 Luo Muchang,Yang Deren,Que Duanlin (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027);Antimony and Oxygen Impurity in Heavily Antimony doped CZ Silicon Crystals[J];SEMICONDUCTOR TECHNOLOGY;1999-05
4 You Renran/Institute of Mechanics,Academia Sinica,Beijing,100080Hu Wenrui/Institute of Mechanics,Academia Sinica,Beijing,100080;Analysis of Thermo-Solutal-Capillary Convection in Floating Zone[J];Chinese Journal of Semiconductors;1992-04
5 Zhang Hongzhi,Hu Lizhong,Sun Xiaojuan,Wang Zhijun,and Liang Xiuping(State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams, Dalian University of Technology,Dalian 116024,China);GaAs Microtips Grown by Selective LPE for SNOM Sensors[J];Chinese Journal of Semiconductors;2005-06
6 Li Xun;Chen Genxiang and Jian Shuisheng (Lightwave Tech. Res.Ins., Northern Jiaotong University,Beijing 100044);Theory and Expriment of Liquid Phase Epitaxy on Curved InP Surface[J];CHINESE JOURNAL OF SEMICONDUCTORS;1995-02
7 Wang Peilin;Zhang Guoyan and Zhou Shiren(Department of control Engineering,Harler Institute of Technology,Harbin 150001);Research on Numerical Simulation for Bridgman-Hg_(1-x)Cd_xTe Crystal Growth in Magnetic Field[J];CHINESE JOURNAL OF SEMICONDUCTORS;1996-07
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