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《Surface Technology》 2010-04
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The Research Progress of Precursors for Atomic Layer Deposition

YUAN Jun-ping1,2,LI Wei1,GUO Wen-xian1(1.College of Science & Technology,Jinan University,Guangzhou 510632,China;2.Guangzhou Panyu Polytechnic,Guangzhou 511483,China)  
The basic theory and characteristics of ALD process were introduced in briefly,and the research progress of precursors was summarized from two groups,including inorganic and organicmetal.The characteristics of single elements and halides as precursors in inorganic group,and those of organicmetal precursors such as alkyls,cyclopentadienyls,alkoxides,β-Diketonates,alkylamides,silylamides and amidinates were discussed.Considering the ALD process characteristics and the requirement for the film,it emphasized that several important factors should be synthetically considered in selection of precursors,including vapor pressure,reactivity,chemical stability,activity of reaction products,safety and source,etc.
【Fund】: 广州市教育局科研项目(08C013);; 广州市教育系统首批建设创新学术团队项目(穗教科2009-11)
【CateGory Index】: TG174.4
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 WU Yi-yong, LI Bang-sheng, WANG Chun-qing(Harbin Institute of Technology, Harbin 150001, China);Theory and Applications of Atomic Layer Deposition[J];Equipment For Electronic Products Manufacturing;2005-06
2 He Junpeng,Zhang Yueguang*,Shen Weidong,Liu Xu,Gu Peifu (State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou 310027,China);Atomic Layer Deposition and Its Applications in Optical Thin Films[J];Chinese Journal of Vacuum Science and Technology;2009-02
【Co-citations】
Chinese Journal Full-text Database 4 Hits
1 WANG Zhiyu,JIAO Gangcheng,FAN Huiqing(State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072);Principle and Application of Ferroelectric Films by Atomic Layer Deposition[J];Materials Review;2007-S1
2 He Junpeng Zhang Yueguang Shen Weidong Liu Xu Gu Peifu(State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou,Zhejiang 310027,China);Optical Properties of Al_2O_3 Thin Film Fabricated by Atomic Layer Deposition[J];Acta Optica Sinica;2010-01
3 He Junpeng,Zhang Yueguang*,Shen Weidong,Liu Xu,Gu Peifu (State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou 310027,China);Atomic Layer Deposition and Its Applications in Optical Thin Films[J];Chinese Journal of Vacuum Science and Technology;2009-02
4 Shi Yaping1,2 Gao Yan3 Sun Chengyue1 Wu Yiyong1(1 School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150080)(2 Harbin University of Commerce,Harbin 150028)(3 Western Metal Materials Limited Liability Company,Xi’an 710000);SILAR Method for Preparation of Ultra-Thin Functional Film and Its Application[J];Aerospace Materials & Technology;2010-04
【Secondary Citations】
Chinese Journal Full-text Database 2 Hits
1 WU Yi-yong, LI Bang-sheng, WANG Chun-qing(Harbin Institute of Technology, Harbin 150001, China);Theory and Applications of Atomic Layer Deposition[J];Equipment For Electronic Products Manufacturing;2005-06
2 SHEN Can,LIU Xiong-ying,HUANG Guang-zhou(College of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,China);Atomic layer deposition and its applications in semiconductor[J];Vacuum;2006-04
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