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《Surface Technology》 2012-03
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Analysis of Aluminum Deposition on Inner Wall of Pipes with Atomic Layer Deposition

LIU Heng,XIONG Yu-qing,WANG Ji-zhou(Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics,Lanzhou 730000,China)  
The feasibility of aluminum deposition on inner wall of waveguide by atomic layer deposition was studied.First,by solving adsorption kinetics equation based on gas on the pipe inner wall,the time for the reactant to reach saturated adsorption on the basis was calculated.Then,according to the aluminum crystal structure,the thickness of each deposition cycle was obtained.Finally,the minimum aluminum thickness and number of atomic layer deposition cycles that can meet electromagnetic requirement of wave guide was calculated.
【Fund】: 中国空间技术研究院青年创新基金(GY0303)
【CateGory Index】: TG174.44
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 WU Yi-yong, LI Bang-sheng, WANG Chun-qing(Harbin Institute of Technology, Harbin 150001, China);Theory and Applications of Atomic Layer Deposition[J];Equipment For Electronic Products Manufacturing;2005-06
【Co-citations】
Chinese Journal Full-text Database 8 Hits
1 YUAN Jun-ping1,2,LI Wei1,GUO Wen-xian1(1.College of Science & Technology,Jinan University,Guangzhou 510632,China;2.Guangzhou Panyu Polytechnic,Guangzhou 511483,China);The Research Progress of Precursors for Atomic Layer Deposition[J];Surface Technology;2010-04
2 WANG Zhiyu,JIAO Gangcheng,FAN Huiqing(State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072);Principle and Application of Ferroelectric Films by Atomic Layer Deposition[J];Materials Review;2007-S1
3 ZHANG Zhimin1,2,GUO Changyou2,MA Bo1,LING Fengxiang2,MIAO Sheng1,2,SHEN Zhiqi2,WENG Lei1(1.School of Chemistry and Material Science,Liaoning Shihua University,Fushun 113001,Liaoning,China; 2.Sinopec Fushun Research Institute of Petroleum and Petrochemicals,Fushun 113001,Liaoning,China);Application of atomic layer deposition technology in modification of porous alumina by titanium[J];Industrial Catalysis;2012-06
4 HE Xiaokun,ZUO Ran,XU Nan,YU Haiqun (School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013);Review of Growth Mechanism for Ⅲ-Ⅴ Compound Semiconductor by Atomic Layer Epitaxy[J];Materials Review;2012-17
5 ZHAO Qiaoqiao,SANG Lijun,CHEN Qiang(Beijing Key Laboratory of Printing & Packaging Materials and Technology,Beijing Institute of Graphic Communication,Beijing 102600,China);Study of Aluminum Films Deposited by Atomic Layer Deposition[J];Journal of Beijing Institute of Graphic Communication;2013-02
6 LIAO Rong1,2,ZHANG Haiyan1,XIE Jialiang2,YANG Tiezheng2, LUO Wenzhong2,HU Wei2(1 School of Materials and Energy,Guangdong University of Technology,Guangzhou 510090;2 School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510641);Study on Application of Atomic Layer Depositing Zinc Oxide for Buffer Layer to Copper Indium Gallium Selenium Solar Battery[J];Materials Review;2013-12
7 Shi Yaping1,2 Gao Yan3 Sun Chengyue1 Wu Yiyong1(1 School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150080)(2 Harbin University of Commerce,Harbin 150028)(3 Western Metal Materials Limited Liability Company,Xi’an 710000);SILAR Method for Preparation of Ultra-Thin Functional Film and Its Application[J];Aerospace Materials & Technology;2010-04
8 He Junpeng,Zhang Yueguang*,Shen Weidong,Liu Xu,Gu Peifu (State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou 310027,China);Atomic Layer Deposition and Its Applications in Optical Thin Films[J];Chinese Journal of Vacuum Science and Technology;2009-02
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