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《Journal of Beijing Normal University(Natural Science)》 2003-02
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A NUMERICAL ANALYSIS FOR A NEW TYPE TRANSISTOR

Guo Huimin 1) Zhou Hui 2) Ji Chengzhou 1) ( 1) Institute of Low Energy Nuclear Physics, Key Laboratory of Beam Technology and Materials Modification of Ministry of Education; 2) Department of Physics: Beijing Normal University, 100875, Beijing, China)  
Through numeral simulation, the inner electric field, carrier distribution and output property of a new type PNP transistor are obtained. The width of effective base region of the transistor is about 50 nm. It is proved that the electric field in the effective base region is the main cause for the minority carrier to move. The output property of the transistor is almost the same as that of MOS field effect transistor. This transistor is expected to be a high speed device in digital circuits.
【Fund】: 北京市自然科学基金资助项目 (4962 0 0 4)
【CateGory Index】: TN32
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