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Study of Aluminum Films Deposited by Atomic Layer Deposition

ZHAO Qiaoqiao,SANG Lijun,CHEN Qiang(Beijing Key Laboratory of Printing & Packaging Materials and Technology,Beijing Institute of Graphic Communication,Beijing 102600,China)  
Atomic layer deposition was a technique of thin film preparation,which was widely used in the deposition of oxide and nitride but the reports of metal films were less.In order to study metal films prepared by atomic layer deposition,the aluminum films were grown in the equipment of atomic layer deposition assisted through electron cyclotron resonance plasma using trimethylaluminum and hydrogen as the precursor and reductant respectively.Self-controlled parameters for trimethylaluminum and H2 were determined,and X-ray diffraction,atomic force microscope,four point probe were used to measure the structure and property of the as-deposited films.The results showed that the aluminum films could be successfully deposited using plasma-assisted atomic layer deposition technique and the substrate temperature influenced the deposition rate and surface topography of the films.After annealing in hydrogen atmosphere,the crystal structure of as-deposited films was improved and the surface resistance was also significantly decreased.
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