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《Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)》 2009-01
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C-V characteristics of 6H-SiC buried-channel MOSFET

WANG Yu-qing,WANG Wei,SHEN Jun-jun(College of Electronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,P.R.China)  
The C-V characteristics of the 6H-SiC buried-channel MOSFET analytical model was investigated,and the C-V relationships in each model,such as accumulation,inversion,depletion and pinch off,were simulated.The C-V characteristics in depletion model and pinch off model were analyzed,and the effect of the interface states on SiO2/SiC interface and pn junction was considered in the analytical model.The assumption of uniform distribution for interface state was used in order to simplify the theoretical model.Finally the numerical results were compared with the experimental result,and the causes for difference between the two results were analyzed.
【Fund】: 重庆市科委自然科学基金项目(CSTC 2006BB2364)
【CateGory Index】: TN386
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