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《Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)》 2009-01
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C-V characteristics of 6H-SiC buried-channel MOSFET

WANG Yu-qing,WANG Wei,SHEN Jun-jun(College of Electronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,P.R.China)  
The C-V characteristics of the 6H-SiC buried-channel MOSFET analytical model was investigated,and the C-V relationships in each model,such as accumulation,inversion,depletion and pinch off,were simulated.The C-V characteristics in depletion model and pinch off model were analyzed,and the effect of the interface states on SiO2/SiC interface and pn junction was considered in the analytical model.The assumption of uniform distribution for interface state was used in order to simplify the theoretical model.Finally the numerical results were compared with the experimental result,and the causes for difference between the two results were analyzed.
【Fund】: 重庆市科委自然科学基金项目(CSTC 2006BB2364)
【CateGory Index】: TN386
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【References】
Chinese Journal Full-text Database 2 Hits
1 CHEN Xiao-min (Department of Mathematics and Computer Science,Chengdu Electromechanical College,Chengdu 610031,P.R.China);Numerical simulation of measuring the minority carrier lifetime based on the ZERBST method[J];Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition);2011-03
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 Gao Jinxia,Zhang Yimen,and Zhang Yuming(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China);C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC[J];Chinese Journal of Semiconductors;2006-07
2 Gao Jin-Xia Zhang Yi-Men Tang Xiao-Yan Zhang Yu-Ming(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET[J];Acta Physica Sinica;2006-06
【Co-citations】
Chinese Journal Full-text Database 4 Hits
1 WANG Wei,WANG Yuqing,SHEN Junjun,TANG Zhengwei,MI Junjie (College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,P.R.China);Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET[J];Microelectronics;2009-01
2 Yang Zhou1) Wang Chong1) Wang Hong-Tao1) Hu Wei-Da2) Yang Yu1) 1)(Institute for Optoelectronic Information Materials,Yunnan University,Kunming 650091,China) 2)(National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China);Effects of Ge fraction on electrical characteristics of strained Si_(1-x)Ge_x channel p-MOSFET[J];Acta Physica Sinica;2011-07
3 Du Ming-Xing Wei Ke-Xin (School of Electrical Engineering and Automation,Tianjin University,Tianjin 300072,China)(Tianjin Key Laboratory of Control Theory & Applications in Complicated System,Tianjin University of Technology,Tianjin 300384,China);A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region[J];Acta Physica Sinica;2011-10
4 Qi Ning Wang Yuan-Wei Wang Dong Wang Dan-Dan Chen Zhi-Quan (Hubei Nuclear Solid Physics Key Laboratory,School of Physics,Wuhan University,Wuhan 430072,China);Positron annihilation study of the microstructure of Co doped ZnO nanocrystals[J];Acta Physica Sinica;2011-10
【Co-references】
Chinese Journal Full-text Database 2 Hits
1 Tang Bihua(The Graduate School,Beijing University of Posts and Telecommunications, Beijing 100088)Liu Yuan'an(Division of Science and Technology ,Beijing University of Posts and Telecommunications ,Beijing 100088);The Electrostatic Field of a Portion of a Slotted Cylinder[J];Journal of Beijing University of Posts and Telecommunications;1995-01
2 Yang Yonghui~(1,2),Tang Zhaohuan~(1,+),Zhang Zhengyuan~(1,2),Liu Yong~(1,2),Wang Zhikuan~1,Tan Kaizhou~(1,2),and Feng Zhicheng~11 Sichuan Institute of Solid-State Circuits,CETC,Chongqing 400060,China2 National Laboratory of Analog ICs,Chongqing 400060,China;A novel structure in reducing the on-resistance of a VDMOS[J];Journal of Semiconductors;2011-02
【Secondary Citations】
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1 SHANG YE-CHUN ZHANG YI-MEN ZHANG YU-MING (Microelectronics Institute,Xidian University,Xi'an\ 710071,China);MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS[J];Acta Physica Sinica;2001-07
2 Yang Lin An\ Zhang Yi Men\ Gong Ren\|Xi\ Zhang Yu Ming (Microelectronics Institute, Xidian University ,Xi'an\ 710071, China);Analysis of self-heating effect on 4H-SiC RF power MESFETs[J];Acta Physica Sinica;2002-01
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