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《Journal of Transducer Technology》 1994-04
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Sensing Technology Based on Polycrystalline Silicon (Serial Four)

Wang Shanci(The 49th Research Institute of the Ministry of Electronics Industry)  
【CateGory Index】: TP212
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【References】
Chinese Journal Full-text Database 1 Hits
1 ZHANG Wei,WANG Yang-yuan (Institute of Microelectronics,Peking University,Beijing 100871,China);Research on Poly-Silicon Integrated Pressure Sensor for High Temperature[J];Acta Electronica Sinica;2003-11
【Citations】
Chinese Journal Full-text Database 2 Hits
1 Zhao Ganming/Department of Electronic Engineering,Fudan UniversityBao Minhang/Department of Electronic Engineering,Fudan University;Statistical Analysis for the Sensitivity of Polysilicon Piezoresistance[J];Chinese Journal of Semiconductors;1989-09
2 Zhao Ganming Bao Minhang (Fudan University);Statistical Analsis of The Sensitivity of Polysilicon Transverse Piezoresistance[J];Journal of Transcluction Technology;1989-02
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Liu Zhonghou Dept. of Physics, Haerbin Teachers University Haerbin 150080;Error in the Principle of Superposition and Its Correction(3)[J];Semiconductor Optoelectronics;1991-02
2 GUO Tao,SHI Yun bo,ZHANG Wen dong (The Ministry Education Key Lab for Instrumentation Science & Dynamic Measurement, Department of Electronic Engineering,North China Institute of Technology,Taiyuan 030051,China);Study on the temperature compensation method of piezoresistance silicon film sensor[J];Micronanoelectronic Technology;2003-Z1
3 Zhao Ganming/Department of Electronic Engineering,Fudan UniversityBao Minhang/Department of Electronic Engineering,Fudan University;Statistical Analysis for the Sensitivity of Polysilicon Piezoresistance[J];Chinese Journal of Semiconductors;1989-09
4 Zhu Haijun; Chen Hong and Bao Minhang(Department of Electronic Engineering, Fudan University, Shanghai 200433);Design and Characterization of Silicon Lateral Accelerometer[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-07
5 ;The Probe Techniques for electric microarea-testing[J];;1996-02
6 Sun Xinyu Wang Xing Gao Zhenbing Meng Qinghao Yang Ruixia Sun Yicai (The Electronic Engineering Dept. of Hebei University of Technology, Tianjin 300130);The Sensitivity Temperature Drift of Pressure Sensors and Its Compensation Techniques[J];;1998-01
7 ZHU Mu-cheng, XIA Ji (Dept. of Electromechanical Engineering, Southwest Ins. of Tech., Miangyang 621002, China) ZHANG Li-hong (Luoyang College of Higher Professional Training, Luoyang 471000, China) LIU Qiang (No. 403 Research Office, CARDC, Mianyang 622;Research on the Properties of Piezoresistive Transducer[J];ORDNACE INDUSTRY AUTOMATION;2000-02
8 ZHU Mu-cheng (Collage of Electromechanical Engineering and Automation, Southwest University of Science & Technology. Mianyang 621002,China);Research on a Shocking Accelerometer[J];Ordnace Industry Automation;2001-01
9 YU Shang-jiang~(1,2),YANG Ji-xiang~2,LI Ke-jie~1 (1.School of Mechatronic Engineering,Beijing Institute of Technology,Beijing 100081,China;2.The Third Engineer Scientific Research Institute of the Headquarters of the General Staff,Luoyang 471023,Henan,China);Development of a Ytterbium Foil Stress Sensor and Its Experimental Research[J];Acta Armamentarii;2006-04
10 Wu Xianping Hu Meifeng (Electronic Engineering Department, Fudan University);A Study on Improving Performance of Diffuse Silicon Pressure Sensors[J];Journal of Transcluction Technology;1992-03
China Proceedings of conference Full-text Database 1 Hits
1 Yan Hongtao Cui Wei Wang Xuebin;MPM4730,an Intelligent Pressure Switch with High Accuracy[A];[C];2007
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 ZHONG Li-zhi~1, ZHANG Wei-jia~1, CUI Min~1, WU Xiao-wen~1, LI Guo-hua~2, DING Kun~2(1. Condensed Matter Physics & Material Physics Research Center,Beijing University of Aeronautics & Astronautics,Beijing 100083,CHN; 2. National Laboratory for Superlattices and Microstructures,Instituteof Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN);Measurement and Study on Optical Properties of Nano-crystalline Silicon Films[J];Semiconductor Optoelectronics;2005-04
2 Liu Xiaowei,Huo Mingxue,Chen Weiping,Wang Donghong and Zhang Ying(MEMS Center,Harbin Institute of Technology,Harbin 150001,China);Theoretical Research on Piezoresistive Coefficients of Polysilicon Films[J];Chinese Journal of Semiconductors;2004-03
3 Huo Mingxue~1,Liu Xiaowei~1,Zhang Dan~ 1,2,Wang Xilian~1,and Song Minghao~1(1 MEMS Center,Harbin Institute of Technology,Harbin 150001,China) (2 College of Electronic Engineering,Heilongjiang University,Harbin 150080,China);Piezoresistive Effect of Polysilicon Films at High Temperature[J];Chinese Journal of Semiconductors;2005-11
4 Wang Shanci ( The 49th Research Institute of Ministry of Electronics Industry);Sensing Technology Based on Polycryctalline Silicon (Serial one)[J];Journal of Transducer Technology;1994-01
5 QIAN Jing - bo, LI Dan (The 49th Research Institute of the Electronics, Ministry of Infornation Industry, Harbin 150001, China);The new technologies of Si_3N_4 passivation for Si strain gauge[J];Journal of Transducer Technology;2000-06
6 S H I Guo┐hua, Z H A N G Xi┐w en, D U Pi┐yi, H A N Gao┐rong( Depart.of Mater. Sci.and Eng. State Key Lab. of Silicon M ater. Sci., Zhejiang Univ., Hangzhou 310027, China);Research Progress in Nanocrystalline Silicon Film s[J];MATERIALS SCIENCE AND ENGINEERING;1999-03
7 YAO Su ying,QU Hong wei,ZHANG Wei xin,MAO Gan ru,LI Yong sheng (College of Electronic & Information Engineering,Tianjin University,Tianjin 300072,China);The Computer Simulation for the Strain Distribution of the Twin Isles Polysilicon Pressure Sensor[J];Acta Electronica Sinica;1999-11
8 ZHANG Wei,WANG Yang-yuan (Institute of Microelectronics,Peking University,Beijing 100871,China);Research on Poly-Silicon Integrated Pressure Sensor for High Temperature[J];Acta Electronica Sinica;2003-11
9 CUI Jiang-tao,WANG Lin-jun,SU Qing-feng,RUAN Jianfeng,JIANG Li-wen,SHI Wei-min,XIA Yi-ben(School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China);Electrical properties of CVD diamond films with different grain sizes[J];Journal of Functional Materials and Devices;2006-04
10 Liu Xiaowei Guoqing Zhang Gao Wei Liu Zhenmao;The Crystal Structure of LPCVD Polysilicon Films[J];Journal of Harbin Institute of Technology;1990-02
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 ;Design Of High-Temperature Pressure Sensor Based On AlN And Polysilicon Membrane[J];Sensor World;2008-01
【Secondary Citations】
Chinese Journal Full-text Database 2 Hits
1 Wang Yan/Institute of Microelectronics Fudan UniversityBao Minhang/Institute of Microelectronics Fudan UniversityJin Qi/Institute of Microelectronics Fudan University;Effect of Shear Stress on the Sensitivities of Piezoresistors[J];Chinese Journal of Semiconductors;1986-05
2 Bao Minhang, Wang Yan (Electronic Engineermg Department);TRANVERSE PIEZORESISTIVE PRESSURE SENSORS AT CENTER OF SILICON DIAPHRAGM[J];Journal of Fudan University;1986-03
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