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《Chinese Journal of Catalysis》 2004-11
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Preparation and Characterization of Composite Semiconductor Photocatalyst Cu/MoO_3-TiO_2

MEI Changsong, ZHONG Shunhe *(College of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China)  
The composite semiconductor MoO 3-TiO 2 was prepared by sol-gel method and a new type Cu/MoO 3-TiO 2 photocatalyst was prepared by an isovolumetric impregnation method. The surface structure, particle size and photoabsorption performance of the catalyst were characterized by X-ray diffraction (XRD), laser Raman spectroscopy (LRS), temperature-programmed reduction (TPR), infrared spectroscopy (IR), transmission electron microscopy (TEM) and ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS). The results showed that the supporting of MoO 3 on bulk TiO 2 restrained the increase of TiO 2 crystal diameters and its change from anatase to rutile. The average particle size of the catalyst was 10~20 nm and MoO 3 dispersed on the TiO 2 support surface with one monolayer of non-crystalline phase. The dispersion threshold value of MoO 3 on TiO 2 support was 10%. The blue shift of photoabsorption edges was observed clearly after the addition of MoO 3 on the TiO 2 surface. The crystallite MoO 3 appeared and the photoabsorption performance decreased when the MoO 3 amount was more than the dispersion threshold. The formation of Mo-O-Ti bonds in the catalyst promoted the transfer of photo-generated current carriers between MoO 3 and TiO 2. Loading of metal Cu on the composite semiconductor MoO 3-TiO 2 improved the transformation from the tetrahedrally coordinated Mo species to the octahedrally coordinated Mo species.
【Fund】: 国家重大基础研究前期研究专项 ( 2 0 0 1CCA0 3 60 0 )资助
【CateGory Index】: O643
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