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《Materials Review》 2006-S1
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The Development of TiO_2 Films and the Properties of N-doped TiO_2 Films Prepared by APCVD

WANG Weiwei, GUO Yu, ZHANG Xiwen, HAN Gaorong(Department of Materials Science and Engineering, Silicon State Key Lab. Zhejiang University, Hangzhou 310027)  
It summarizes the development of TiO_2 all over the world, and introduces the photocatalysis of TiO_2 in terms of the theory and character factors, and generalizes the preparation methods of TiO_2. The samples of N-doped TiO_2 films prepared by atmosphere pressure chemical vapor deposition are tested and analyzed,and we find that N element exists in the TiO_2 films and the hydrophilicity in the surface is improved after N is doped in the films.
【Fund】: 国家高技术研究发展计划(2001AA320202)(863计划);; 国家自然基金(50372060)项目资助
【CateGory Index】: TB383.2
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