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《Materials Review》 2007-S1
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Principle and Application of Ferroelectric Films by Atomic Layer Deposition

WANG Zhiyu,JIAO Gangcheng,FAN Huiqing(State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072)  
The principle of atomic layer deposition technique (ALD)comparing with conventional film deposition processes,especially in vacuum originated and deposition mechanism,are discussed. Then,the recent progress in ferroelectric films prepared by ALD is reviewed,and consequential issues met in the research,such as metal precursor,defect and kinetics of surface chemical reaction are also discussed. Finally,the outlook of synthesizing ferroelectric films by ALD is predicted.
【Fund】: 教育部优秀青年教师和新世纪人才计划资助项目;; 西北工业大学科技创新基金和研究生种子基金项目(Z200516 Z200517)
【CateGory Index】: TB43
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