Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Materials Review》 2008-S1
Add to Favorite Get Latest Update

Research on Configuration and Dielectric Properties of Mesoporous SiO_2 Low-k Films

WU Zhaofeng~1,YAO Lanfang~2 (1 Department of General Studies,Yancheng Institute of Technology,Yancheng 224003;2 Department of Physics, University of Shanghai for Science and Technology,Shanghai 200093)  
Mesoporous SiO_2 films are prepared by the Sol-gel process in this paper.The dielectric constant is determined by capacitance-frequency measurements of the MIM structure.The results show that the leakage current can be reduced obviously on the premise that k is kept at a lower value by HMDS treatment.The FTIR spectra of the films are measured to find the relationship of the dielectric properties and bonding configuratioa With the analysis of the bond structure of the films before and after HMDS treatment.it can be infered that the hydroxyl groups play an crucial role in improving the dielectric properties of the films.
【Fund】: 上海市重点学科建设项目资助
【CateGory Index】: O484.4
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved