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《Materials Review》 2009-19
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Research Progress in Varied-doping GaAs Photocathodes

CHEN Huailin1, NIU Jun1,2, CHANG Benkang1(1 Institute of Electronic Engineering & Optoelectronic Technology,Nanjing University of Science & Technology,Nanjing 210094;2 Department of Electron & Electric, Nanyang Institute of Technology, Nanyang 473004)  
In this review, the present research progress in varied-doping GaAs photocathodes is summarized from the cases of the structure kinds, the mechanism of photoelectricity emission, the preparation technique and the influence of varied-doping structure on the performance of the cathodes. This work is still in the start stage right now, and needs the further investigation in theory. Researching varied-doping GaAs photocathodes is available to enhancing the performance of local third-generation low light level devices by independent innovation.
【Fund】: 国家自然科学基金(60678043);; 教育部高等学校博士点基金资助项目(20050288010)
【CateGory Index】: O462.3
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