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《Materials Review》 2012-17
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Review of Growth Mechanism for Ⅲ-Ⅴ Compound Semiconductor by Atomic Layer Epitaxy

HE Xiaokun,ZUO Ran,XU Nan,YU Haiqun (School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013)  
The research progress in the growth mechanism of Ⅲ-Ⅴ compound semiconductor by atomic layer epitaxy(ALE) is reviewed,with emphasis on the surface reactions of GaAs.There are two surface reaction mechanisms in the ALE growth of GaAs: one is the adsorbate inhibition mechanism,the other is the selective adsorption mechanism.In the adsorbate inhibition mechanism,the pyrolysis of Ga(CH3)3 occurs on the surface which results in the adsorption of Ga(CH3)x(x=1 or 2).The surface reactions stop automatically because of the steric hindrance effect caused by CH3 ligand in Ga(CH3)x.In the selective adsorption mechanism,the surface pyrolysis of Ga(CH3)3 will result in the adsorption of atomic Ga.When the surface is saturated with a monolayer of Ga,the surface reactions stop automatically.The gas phase reactions and the effect of atomic hydrogen in GaAs ALE are also briefly discussed.
【Fund】: 国家自然科学基金(61176009);; 江苏省研究生创新计划项目(CX10B_260Z)
【CateGory Index】: TB383.2
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【Citations】
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 YUAN Jun-ping1,2,LI Wei1,GUO Wen-xian1(1.College of Science & Technology,Jinan University,Guangzhou 510632,China;2.Guangzhou Panyu Polytechnic,Guangzhou 511483,China);The Research Progress of Precursors for Atomic Layer Deposition[J];Surface Technology;2010-04
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3 WANG Zhiyu,JIAO Gangcheng,FAN Huiqing(State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072);Principle and Application of Ferroelectric Films by Atomic Layer Deposition[J];Materials Review;2007-S1
4 ZHANG Zhimin1,2,GUO Changyou2,MA Bo1,LING Fengxiang2,MIAO Sheng1,2,SHEN Zhiqi2,WENG Lei1(1.School of Chemistry and Material Science,Liaoning Shihua University,Fushun 113001,Liaoning,China; 2.Sinopec Fushun Research Institute of Petroleum and Petrochemicals,Fushun 113001,Liaoning,China);Application of atomic layer deposition technology in modification of porous alumina by titanium[J];Industrial Catalysis;2012-06
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【Secondary Citations】
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1 XU Qian,ZUO Ran,ZHANG Hong(School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013,China);Design and Simulation of Reverse-flow Showerhead MOCVD Reactors[J];Journal of Synthetic Crystals;2005-06
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