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《Materials Review》 2012-17
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Review of Growth Mechanism for Ⅲ-Ⅴ Compound Semiconductor by Atomic Layer Epitaxy

HE Xiaokun,ZUO Ran,XU Nan,YU Haiqun (School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013)  
The research progress in the growth mechanism of Ⅲ-Ⅴ compound semiconductor by atomic layer epitaxy(ALE) is reviewed,with emphasis on the surface reactions of GaAs.There are two surface reaction mechanisms in the ALE growth of GaAs: one is the adsorbate inhibition mechanism,the other is the selective adsorption mechanism.In the adsorbate inhibition mechanism,the pyrolysis of Ga(CH3)3 occurs on the surface which results in the adsorption of Ga(CH3)x(x=1 or 2).The surface reactions stop automatically because of the steric hindrance effect caused by CH3 ligand in Ga(CH3)x.In the selective adsorption mechanism,the surface pyrolysis of Ga(CH3)3 will result in the adsorption of atomic Ga.When the surface is saturated with a monolayer of Ga,the surface reactions stop automatically.The gas phase reactions and the effect of atomic hydrogen in GaAs ALE are also briefly discussed.
【Fund】: 国家自然科学基金(61176009);; 江苏省研究生创新计划项目(CX10B_260Z)
【CateGory Index】: TB383.2
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