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《Journal of Materials Engineering》 2009-05
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Crystallographic Features Study of Polycrystalline Silicon Ingot for Solar Cells

XU Wei-ping1,WANG Yun1,HU Yong1,ZHOU Lang2(1 School of Aeronautical and Mechanical Engineering,Nanchang Hangkong University,Nanchang 330063,China;2 School of Material Engineering,Nanchang University,Nanchang 330031,China)  
The grain boundary character in polycrystalline silicon ingot was studied by electron back scattered diffraction(EBSD).The results showed that there was nearly no misorientation in a crystal.The misorientation was mainly in grain boundaries of polycrystalline silicon ingot.Most grain boundaries were observed with large angle grain boundaries.Σ3 was the chief of these large angle grain boundaries.Small angle grain boundaries were also observed with a low ratio.Low efficiency solar cells by polycrystalline silicon ingot might be related to high ratio of Σ3.
【Fund】: 南昌航空大学科研基金资助项目(EC200703025)
【CateGory Index】: TM914.4
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【Citations】
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1 GUO Zhiqiu~1, SHEN Hui~2, LIU Zhengyi~1, WEN Lishi~1(1 College of Mechanical Engineering, South China University of Technology, Guangzhou 510640; 2 College of Physic Science & Technology Engineering, Sun Yat-sun University, Guangzhou 510275);The Progress of Solar Cell Studying[J];Materials Review;2006-03
【Co-citations】
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