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Study of the Metallization and Interface Reactionbetween Diamond Film and Ti Layer by AES

Zheng Bin Zhu Yongfa Yao Wenqing Wang Hequan Cao Lili(Department of Chemistry,Tsinghua University)Hu Weimin(Institute of Crystal in Beijing)  
A Ti layer with a thickness of 250nm was successfully deposited on the surface of a diamond thin film substrate using RF magnetron sputtering techniqueThe interface reaction between Ti and diamond was promoted by vacuum annealing at the range of 300℃to 600℃The Auger profile results showed that the width of interface layer was more than 600nmThe formation of TiC at the interface was confirmed by C KLL line shapeThe chemical reaction suggested that there was strong chemical bond in interface of Ti/diamond,which was an important factor for the high adhesion strength between metal and diamondThis provided the possibility to produce cutting tools with high performanceThe activation energy of the diffusion reaction was 123kJ/molTi layer was seriously oxidized when the annealing temperature reached 600℃To increase annealing time may be a good way to increase the interface reaction
【CateGory Index】: O484.5,O647.9
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