Effect of Annealing Temperature on the Properties of Nickel Oxide Thin Films Prepared by Sol-gel Dip Coating

HE Zuo-peng, JI Zhen-guo (State key laboratory for silicon materials CMSCE, Zhejiang University, Hangzhou 310027, China)  

NiO thin films were deposited on quartz substrates by sol-gel dip-coating method using Ni(Ac) 2·4H 2O as the starting materials. XRD measurement results showed that for process temperature below 800℃, the grain size, the (200) diffraction peak intensity, and the orientation factor of the (200) diffraction peak increased as the temperature increased. For process temperature above 800℃, the opposite phenomena were observed. So the optimum process temperature for the deposition of NiO film by this method was 800℃. Optical band-gap measured by UV-Vis absorption revealed that the band-gap of NiO thin films showed an opposite trend compared to the grain size, which can be qualitatively explained by the quantum confinement effect caused by small grain size in the film.

【Fund】： 国家基础研究发展规划专项资助项目(G2 0 0 0 0 683) ;; 国家自然科学基金重大资助项目(90 2 0 1 0 38) ;; 国家高技术研究发展计划资助项目 (2 0 0 3AA 3 A1 9);; 浙江省分析测试基金资助项目 (0 31 0 3)
【CateGory Index】： O614

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