Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Rare Metal Materials and Engineering》 2006-10
Add to Favorite Get Latest Update

Study on Impurity and Micro-Defects of ND-SI-GaAs

Sun Weizhong, Niu Xinhuan, Wang Haiyun, Liu Caichi, Xu Yuesheng (Hebei University of Technology, Tianjin 300130, China)  
The micro-defects and impurities distribution in φ76 mm nondoped-semi-insulating-GaAs (ND-SI-GaAs) were investigated by means of chemical etching method, metallographic microscope, TEM, EPMA and EDX. The results showed that the movement and reaction of high dense dislocation formed cell structures, which were the small angle grain boundary formed during crystal. Dislocation and micro-defects interacted strongly each other. Carbon impurity concentration decreased from cell wall, vicinity of cell wall to denuded zone sequentially and striation distribution existed.
【Fund】: 国家自然科学基金(60276009);; 中国人民解放军总装备部(00JS02.2.1QT4501);; 河北省自然科学基金(599033)资助项目
【CateGory Index】: TN304.23
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved