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《Journal of Chongqing Normal University(Natural Science Edition)》 2008-01
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Effects of Annealing on the Microstructure,Electrical and Optical Properties of N-In Codoped p-Type ZnO Films

QIN Guo-ping,KONG Chun-yang,RUAN Hai-bo,NAN Mao,ZHU Ren-jiang(College of Physics and information Technology,Chongqing Normal University,Chongqing 400047,China)  
N-In codoped ZnO thin films on quartz glass substrates can be fabricated by using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants(nitrogen).The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by x-ray diffraction(XRD),Hall measurements system and transmission spectrum.The experimental results suggest that an appropriate annealing temperature and time play an important role in the microstructure,electronic and optical properties, especially the types of conduction of ZnO films.When the annealing temperature is in the range of 550-580℃ and annealing time changes from 5 to 10 min,N-In codoped p-type ZnO films can be obtained.It is noticeable that the film annealed for 20 min at 580℃ exhibits the optimal p-type electrical properties with hole concentration of 1.22×1018cm-3,hall mobility of 2.19 cm2 V-1s-1,and low resistivity of about 2.33 Ωcm,as well as good film quality among all the samples.It is also found that all ZnO films annealed have no significant variance over absorption edge,whose wavelength is at 378nm,corresponding to energy of 3.25eV.
【Fund】: 重庆市自然科学基金(No.AC4034);; 重庆市教委项目(No.KJ050812)
【CateGory Index】: TN304.055
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